ECO Devices Lab has developed unique White LEDs without phosphor by the original MOCVD technology. Nitride-based LED quantum structure emits white light that covers 410-770 nm. The LED light covers over 90% of the human visible region.  The article entitled “Optoelectronic devices that emit warm and cool white light”. ​

​ECO Devices Lab has developed unique White LEDs without phosphor by the original MOCVD technology. Nitride-based LED quantum structure emits white light that covers 410-770 nm. The LED light covers over 90% of the human visible region.  The article entitled “KAUST Researchers Develop New Approach to Fabricate White-Light LEDs​”. ​

ECO Devices Lab has developed unique White LEDs without phosphor by the original MOCVD technology. Nitride-based LED quantum structure emits white light that covers 410-770 nm. The LED light covers over 90% of the human visible region.  The article entitled “Optoelectronic devices that emit warm and cool white light”. ​

​ECO Devices Lab has developed unique White LEDs without phosphor by the original MOCVD technology. Nitride-based LED quantum structure emits white light that covers 410-770 nm. The LED light covers over 90% of the human visible region.  The article entitled “Optoelectronic devices that emit warm and cool white light”. ​

​ECO Devices Lab and ALLOS will develop a key technology for micro-LED displays. That is nitride-based red LEDs using synergy with GaN-on-Si technology. The title of this article is “Micro-LED displays: new opportunities for nitride-based red LED technologies”.

Abstract

This talk will give an overview of the research of III-nitride based visible light-emitting diodes (LEDs) from the KAUST Energy Conversion Devices and Materials (ECO Devices) Laboratory (https://ecodevices.kaust.edu.sa/Pages/Overview.aspx).

The paper entitled "High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits" reports the growth of phosphor-free InGaN-based white light-emitting diodes by metalorganic vapor-phase epitaxy.​ ​
Appl. Phys. Lett. 117, 172103 (2020).​ DOI: 10.1063/5.0026017​