Dean's Distinguished Lectures

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CEMSE Dean's Distinguished Lecture| Illuminating the World: Metalorganic Chemical Vapor Deposition of III-V Compound Semiconductor Devices

Start Date: October 1, 2017
End Date: October 1, 2017

By Prof. Russell D. Dupuis,
Steve W. Chaddick Chair in Electro-Optics Georgia Institute of Technology
School of Electrical and Computer Engineering
The metalorganic chemical vapor deposition (MOCVD) technology for the growth of III–V compound semiconductors has been developed over the past fifty years to become the dominant III-V epitaxial materials technology for both research and production of all advanced optoelectronic devices. Because of the flexibility of the process, the high material quality, and the high productivity of MOCVD, many important III–V devices have become commercially viable. One of the most obvious applications is the development of high-efficiency, visible light-emitting diodes (LEDs). However, the MOCVD technology has also had great impact in the communications sphere and in supporting the advancement of the power of the Internet. This talk will review the current status and recent advancements in MOCVD technology as applied to solid-state lighting and optoelectronic communications applications and speculate on the future development of this technology.
Biography: Prof. Russell D. Dupuis is an internationally recognized expert in III-V compound semiconductor materials and devices, including high-power III-N electronic devices. He was the first to demonstrate state-of-the-art optoelectronic devices grown by metalorganic chemical vapor deposition (MOCVD) which is now used world-wide for the growth of all III-V LEDs, laser diodes, solar cells, and most III-V electronic devices, including III-N power electronics on SiC, sapphire and Si substrates. He also developed the first room-temperature quantum-well laser diodes and demonstrated the first high-reliability MOCVD-grown laser diodes. He worked in industry at Texas Instruments (1973-1975) and Rockwell International (1974-1979). He was a Member of Technical Staff (1979-1986) and a Distinguished Member of Technical Staff (1986-1989) in the Physics Research Division at Bell Laboratories, Murray Hill NJ. Dupuis was appointed a Chaired Professor in Electrical and Computer Engineering at The University of Texas at Austin in 1989. He joined Georgia Institute of Technology in 2003 as full Professor in ECE and Materials Science and the newly established the Steve W. Chaddick Endowed Chair in Electro-Optics and a Georgia Research Alliance Eminent Scholar. He has received the National Medal of Technology (2002), the IEEE Edison Medal (2006), and the Charles Stark Draper Prize of the National Academy of Engineering (2015) and many other national and international awards.

More Information:

For more info contact: Prof. Xiaohang Li : email:
Date: Sunday 1st Oct 2017
Time:12:00 PM - 01:00 PM
Location: Building 9, Hall I Room 2322
Refreshments: Light Lunch will be available at 11:45 am