Ultra-Wide Bandgap Semiconductors for Future of Moore’s Law
This colloquium will discuss the latest material, device and high density IC research based on ultra-wide bandgap semiconductors for the future of Moore’s Law at the Advanced Semiconductor Laboratory (ASL) at King Abdullah University of Science and Technology (KAUST).
Overview
Ultra-wide bandgap compound semiconductors including AlN, GaN, Ga2 O3 and In2O3 have attracted enormous interests. They offer markedly larger figures of merits for power and RF applications than other known semiconductors. Additionally, they can be applied for deep UV-visible optoelectronics and quantum information technologies. Moreover, they could be promising for More Moore, More than Moore, and Beyond Moore applications.
Presenters
Brief Biography
Professor Xiaohang Li has extensive research experience in III-nitride and III-oxide (ultra)wide bandgap semiconductors. Prior to KAUST, Li received his Bachelor degree in Applied Physics from Huazhong University of Science and Technology, China, his Master's degree in Electrical Engineering from Lehigh University, U.S., and his Ph.D. degree in Electrical Engineering from Georgia Institute of Technology, U.S.
Since joining KAUST, Li has advised more than 100 students, and led his Advanced Semiconductor Laboratory (ASL) in making many important and pioneering contributions to semiconductor research. Prof Li and his ASL team focus on the fundamental and applied research of ultrawide and wide-bandgap semiconductor materials, devices, physics and hardware. The ASL team aims to leverage these technologies to revolutionize the energy, communications, and health industries crucial for the sustainability of human society.
