By light confinement in small volumes with resonant recirculation, microcavity lasers promise to complement the rise of Si photonics by populating these chips with small-footprint and low-threshold light sources. The dense, energetically confined, and spatially isolated QD gain medium is utilized for circumventing crystal defects in heteroepitaxy, as well as for scaling to ultra-small dimensions in microcavities. The former allows for laser growth and processing up to 450 mm Si wafer with minimal compromise in light emission efficiency, and the latter enables device miniaturization for ultra-dense photonic integration with complex functionality and economy of scale. We work with  technological demonstrations of QD microcavity devices, and the mission is to use III–V/Si epitaxy to form a bandwidth scale-up, energy scale down, volume manufacturable Si photonics solution.

Please check the book chapter that has been selected as cover of the book “Future Directions in Silicon Photonics” 

Y. Wan, J. Norman, and J. E. Bowers, “Quantum dot microcavity lasers”. Future Directions in Silicon Photonics (2019): 305.