Current Research

Photonics Laboratory at King Abdullah University of Science and Technology is investigating semiconductor lasers and photonic integrated circuits for wide applications optical communications, solid-state lighting and sensors. KAUST and Photonics Lab are well equipped with necessary facilities for semiconductor material growth such as molecular beam epitaxy (MBE), nano-fabrication, and photonic and optoelectronic materials and device characterizations.
 

 

KAUST CEMSE Photonics UWOC Progress
Underwater Wireless Optical Communication (UWOC)

Underwater Wireless Optical Communication (UWOC) has developed in many aspects over the past few years, with significant contribution from the Photonics Lab at KAUST.​​​​

KAUST CEMSE Photonics 7 VLC
Visible Light Communication (VLC)

‌1.1 GHz of modulation bandwidth in LD based VLC without a limitation from the slow 3.8 MHz phosphor response. A high data transmission rate of 2 Gbit/s was achieved without an optical blue filter using OOK modulation scheme.​

KAUST CEMSE EE Photonics InGaN based SLDS
InGaN-based Superluminescent Diodes (SLDs)

​Marry LED and LD virtues Speckle-free + droop free + broad spectrum A good light source for SSL+VLC

KAUST CEMSE EE Photonics Laser Diode
Integrated Waveguide Modulator - Laser Diode (IWM-LD)

The past decade witnessed the rapid development of LED based solid-state lighting (SSL) and visible light communication (VLC) systems.

KAUST CEMSE EE Photonics Quantum Well Intermixing
Quantum Well Intermixing in III-nitrides

We report on a unique area-selective, post-growth approach in engineering the quantum-confined potential-energy profile of InGaN/GaN quantum wells (QWs) utilizing metal/dielectric-coating induced intermixing process.

KAUST CEMSE EE Photonics Ultrathin Gallium Nitride Nanomembranes
Exfoliation of Threading Dislocation-Free, Single-Crystalline, Ultrathin Gallium Nitride Nanomembranes

Despite the recent progress in gallium nitride (GaN) growth technology, the excessively high threading dislocation (TD) density within the GaN crystal, caused by the reliance on heterogeneous substrates, impedes the devel

KAUST CEMSE EE Photonics IEEE JQE Broadband Laser Research
Broadband Semiconductor Lasers

We assessed the effect of additionally broadened quantum dash (Qdash) optical transitions in the multi-stack dash-in-a-well laser structure at both, material and device level.

KAUST CEMSE EE Photonics Gallium Nitride Photonics
Gallium Nitride Photonics

Research on a variety of gallium nitride based nanostructures for light generation in the broadband spectrum. ​