We developed a stochastic model of memristor devices.
Innate stochasticity is modeled in a circuit compatible format and incorporated into models of threshold based memristors covering a wide set of designs. Experimental fitting to fabricated devices highlights the modeling accuracy and the generalized form of behavior.
- Rawan Naous, Maruan Al-Shedivat, and Khaled Nabil Salama, Stochasticity Modeling in Memristors, IEEE Transactions on Nanotechnology (TNANO), vol. 15, no. 1, pp. 15-28, 2016 . DOI:10.1109/TNANO.2015.2493960
- Maruan Al-Shedivat, Rawan Naous,Gert Cauwenberghs, and Khaled Nabil Salama, Memristors Empower Spiking Neurons with Stochasticity, IEEE Journal of Emerging technologies in circuits and systems, VOL. 5, NO. 2, 242-253, JUNE 2015