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10.1063/1.5142546
Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending
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2020-03-23
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10.1063/1.5142546
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© 2020 Author(s)
VoR
doi:10.1063/1.5142546
Applied Physics Letters
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AIP Publishing LLC
Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending
Weijie Wang
Jie Chen
James Spencer Lundh
Shahab Shervin
Seung Kyu Oh
Sara Pouladi
Zhoulyu Rao
Ja Yeon Kim
Min-Ki Kwon
Xiaohang Li
Sukwon Choi
Jae-Hyun Ryou
Appl. Phys. Lett..2020.116:123501
2020-03-23
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10.1063/1.5142546
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