Mritunjay‘s work on NiOx Gate Dielectric for Enhanced Thermal Stability of Threshold Voltage in GaN MIS-HEMTs up to 400°C was accepted by Applied Physics Letter!
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Mritunjay‘s work on NiOx Gate Dielectric for Enhanced Thermal Stability of Threshold Voltage in GaN MIS-HEMTs up to 400°C was accepted by Applied Physics Letter!
