Abstract
This talk will provide an overview of the III-nitride-based visible light-emitting diodes (LEDs). Especially, the InGaN-based blue LEDs are very contributed to energy-saving for light sources all over the world. Therefore, the 2014 Nobel Prize in Physics was awarded to the inventors of blue LEDs. So, what is the next application of visible LEDs? Currently, a topic of considerable interest is full-color displays by RGB LEDs. Tiny LED chips on the micrometer scale can adopt to all displays including ultra-high-definition television, smartphones, smartwatches, virtual reality (VR), and augmented reality (AR). The InGaN-based light-emitting devices are attractive for the next generation of displays by micro-LED chips because the III-nitride materials can emit RGB colors by tuning the material compositions. The current red LEDs are based on the AlInGaP material system. However, the material is not suitable to use for micro-LEDs because the efficiency should drastically when the device dimension shrinks. In this talk, the state-of-the-art performance of InGaN-based red LEDs will be presented.
Brief Biography
Daisuke Iida is a Research Scientist in the Energy Conversion Devices and Materials (ECO Devices) Laboratory at King Abdullah University of Science and Technology (KAUST), Saudi Arabia. He received his Ph.D. degree in Materials Science and Engineering from Meijo University, Japan in 2011. Afterward, he was a postdoctoral fellow and a visiting researcher at Meijo University and Technical University of Denmark, respectively. He worked as an assistant professor at Tokyo University of Science. His research interest is III-nitride semiconductors based optoelectronic devices, especially MOCVD growth of InGaN and its applications. He has author/co-authored more than 80 publications on topics related to III-Nitride crystal growth, optical and electrical devices.
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