InGaN-based light-emitting devices

Overview

III-Nitride-based light-emitting diodes (LEDs) are already commercialized for instance blue and green LEDs. It is very contributed as energy saving light source all over the world. This material is a very attractive material, capable of the emitting range is not only blue light but also UV and visible light. Moreover, application as a power device is also possible, it is one of the materials considered to lead the energy saving society in the future. Visible light LED has a wide range of applications. Visible light LED has a wide range of applications. we expect that there is some application, for instance, μ-LED display, optical communication, plant cultivation, medical treatment, and so on. In the seminar, I will talk about III-Nitride-based visible light emitting devices and introduce recent research with outstanding metalorganic chemical vapor deposition (MOCVD) growth technique.

Brief Biography

Daisuke Iida is a Research Scientist at Energy Conversion Devices and Materials (ECO Devices) Laboratory in the Division of Computer, Electrical and Mathematical Sciences & Engineering (CEMSE). He holds a Ph.D. in Materials Science and Engineering from Meijo University in 2011. Afterward, he held postdoctoral and visiting researcher positions at Meijo University and Technical University of Denmark. Then, he worked as an assistant professor at Tokyo University of Science from 2014 to 2017. His research interest is III-nitride semiconductors based optoelectronic devices, especially MOCVD growth of InGaN and its applications. He has author/co-authored more than 50 publications on topics related to III-Nitride crystal growth, optical and electrical devices.