Advanced Ga2O3 flexible and electronic devices

Overview

Abstract

Nowadays, the development of portable and wearable electronics becomes unprecedentedly significant because they allow for real-time communication, remote controlling, and monitoring of various potential environmental hazards regardless of location and time. The most straightforward and cheap method to produce such flexible electronics the deposition of organic semiconductors as the channel layer on the polymers flexible substrates. However, such organic semiconductors suffer from low current, low breakdown field, and low thermal stability. Inorganic wide bandgap semiconductors such as GaN, SiC, and Ga2O3 can readily solve all these problems. Nevertheless, high-temperature in-situ growth of such inorganic epitaxial thin films on flexible substrates for flexible/portable electronic devices has never been realized because the conventional polymer substrates can not meet the thermal-stability requirements. In this talk, for the first time, we will introduce a buffer-layer functionalized Hastelloy (BFH) technique, by using which epitaxial Ga2O3 thin films can be directly grown on the flexible substrates via pulsed laser deposition at high temperatures. The obtained Ga2O3 flexible semiconductor thin films are readily fabricated into high performance photodetectors and thin film transistors.

Brief Biography

Dr. Xiao Tang is a research staff working in the Advanced Semiconductor Lab in KAUST since 2019. Before joining KAUST, he was a postdoc researcher and engineer in the Ultra-fast Imaging Center in Hamburg, Germany. He obtained his PhD degree from Technical University of Denmark in 2013, master degree from Beijing University of Technology in 2010, and bachelor degree from Hunan University in 2007.