Semiconductor Epitaxy and Micro-Device Fabrication Toward AR and VR World

Overview

Abstract

Wearable, fast-response, and efficient displays are suitable to enjoy the AR and VR world. The most promising candidate is micro-LED displays. The current liquid-crystal displays have white LEDs as the backlight. The white LEDs themselves are efficient. However, when a display creates red (R) color from the white backlight, two-thirds (G&B parts) of light energy is wasted. If each pixel consists of efficient RGB micro-LEDs, such micro-LED displays realize not only energy-saving but also weight-light, flexible, fast-response. The necessary key technologies to achieve such displays are energy-efficient red micro-LEDs and the time-efficient chip-transfer method. To solve those issues, the development of efficient InGaN-based red micro-LEDs is crucial. AlInGaP-based red LEDs are efficient in the standard size, but their efficiency drops rapidly with decreasing device size. On the other hand, InGaN-base red LED keeps its efficiency even at the micro-LED sizes. Also, the material of InGaN is the same material system with blue and green micro-LEDs. The integration of InGaN-based RGB micro-LEDs will realize efficient RGB chip transfer from wafers to display panels. In this seminar, I am going to explain the state-of-the-art semiconductor epitaxy for such efficient red LEDs and device fabrication methods for micro-LEDs from ECO Device Lab at KAUST.

Brief Biography

Kazuhiro Ohkawa is a professor of Electrical and Computer Engineering, Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) division at King Abdullah University of Science and Technology (KAUST). Principle investigator of Energy Conversion Devices and Materials (ECO Devices) lab at KAUST. He is a Fellow of the Japan Society of Applied Physics. He is also a professor (lifelong title) of Physics at University of Bremen (Germany), a guest professor at Xiamen University (China), and a visiting professor at Mie University (Japan). He is interested in optical devices and material science. He is familiar with wide-bandgap materials (III-Nitrides and II-VI compounds) and MOCVD & MBE technologies.