Raman characterization in Nitride
Raman spectroscopy has been used extensively to characterize the strain, defect density, and doping levels in semiconductors. We will introduce Raman spectroscopy in Nitride materials to estimate the crystal quality, and carrier concentration, which is determined by vibration modes.
Overview
Abstract
Raman spectroscopy has been used extensively to characterize the strain, defect density, and doping levels in semiconductors. We will introduce Raman spectroscopy in Nitride materials to estimate the crystal quality, and carrier concentration, which is determined by vibration modes.
Brief Biography
Education
- Apr. 2010 ~ Mar. 2013 Ph.D. Student, Graduate School of Engineering, Mie University, Japan Research Fellowship Division Japan Society for the Promotion of Science (JSPS), DC1
- Apr. 2008 ~ Mar. 2010 Master Student, and Teaching Assistant, Graduate School of Engineering, Mie University, Japan
- Apr. 2004 ~ Mar. 2008 Under Graduate Student, Electrical and Electronic Engineering, Faculty of Engineering, Mie University, Japan
Job
- Jun. 2013 ~ present Assistant Professor, Graduate School of Electrical and Electronic Engineering, Chiba University, Japan
