Demonstration of “WBG and Beyond” Electronics: Towards Large-scale 3D-vertical heterogenous integration
B9 L2 R2322 H1
With the continuous reduction of chip feature size, the continuation of Moore's Law becomes increasingly difficult and heterogeneous integration has become one of the important orientations of electronic technology.
Overview
Abstract
With the continuous reduction of chip feature size, the continuation of Moore's Law becomes increasingly difficult, and heterogeneous integration has become one of the important orientations of electronic technology. Focusing on the issues including system integration and interconnection in submicron to 10 nm orders of magnitude, 3D heterogeneous integration formed by multiple chip connections on package substrates supported by active through-silicon vias breaks the scale barrier from micro-nano technology to system integration at the acceptable cost. 3D heterogeneous integration is gradually developing towards 3D stacking, multi-function integration, and hybrid heterogeneous integration, which makes integrated products have the advantages of high integration, low power consumption, miniaturization, and high reliability. In this talk, work on 3D-stacked Ga2O3-based gate-all-around ambipolar transistors for ultrawide bandgap CMOS integrated circuits will be discussed. We will also briefly summarize the current progress on unipolar Ga2O3 transistors heterogeneously integrated on a sapphire substrate. In addition to this, a short glimpse of In2O3-based transistors for CMOS integrated circuits and memory applications will also be presented. Finally, our mission is to heterogeneously integrate the above-mentioned devices in a 3D-vertical fashion for a wide range of applications including power electronics, energy, and healthcare.
Brief Biography
Saravanan Yuvaraja (Member, IEEE) received a B.E. degree in Electrical Engineering from Anna University, Chennai, India, in 2016, and the M.Tech. degree in electrical engineering from Amity University, Noida, India, in 2018. Currently, he is doing a Ph.D. in Electrical Engineering under the supervision of Prof. Xiaohang Li in the CEMSE division, King Abdullah University of Science and Technology (KAUST), Saudi Arabia. His current research interests include Ga2O3 CMOS, In2O3 CMOS, advanced logic circuits, and CMOS vertical integration. He is the author of 17 peer-reviewed journal papers, 10 international conference papers, and 5 patents. He also recently received KAUST CEMSE Dean Award 2022.
