The fourth wave: ultrawide bandgap semiconductors
Ultrawide bandgap (UWBG) semiconductors including AlN, Ga2O3, c-BN, diamond have attracted enormous interests. They offer markedly larger figures of merits for power and RF applications than other known semiconductors.
Overview
Abstract
Ultrawide bandgap (UWBG) semiconductors including AlN, Ga2O3, c-BN, diamond have attracted enormous interests. They offer markedly larger figures of merits for power and RF applications than other known semiconductors. Additionally, they can be applied for vastly impactful quantum information technologies and deep-far UV optoelectronics. Thus they have been regarded as the 4th generation of semiconductors after the consequential Si, III-V, and wide bandgap materials. This seminar will cover the latest device and IC research on UWBG-based materials, devices, and CMOS.
Brief Biography
Xiaohang is an Associate Professor of Electrical and Computer Engineering and Applied Physics at KAUST. He obtained Ph.D. in Electrical Engineering from Georgia Institute of Technology where he received the Institute’s highest graduate student honor, the Edison Prize. His research focuses on cutting-edge research on ultrawide bandgap semiconductors for next-generation electronics and photonics. He has authored over 140 journal and 200 conference publications. He is the recipient of several prestigious awards including the Harold M. Manasevit Young Investigator Award from the American Association for Crystal Growth, the SPIE D. J. Lovell Scholarship, the IEEE Photonics Graduate Student Fellowship, the Georgia Tech 40 under 40 Award. He is an Associate Editor of Photonics Research and as a committee member of several leading conferences including IWN, EMC, and IC-MOVPE.
