Development of visible InGaN-based light-emitting diodes and their applications

Overview

Abstract

This talk will provide a recent topic of the III-nitride-based visible light-emitting diodes (LEDs). The InGaN-based blue LEDs are very contributed to energy-saving for light sources all over the world. Therefore, the 2014 Nobel Prize in Physics was awarded to the inventors of blue LEDs. So, what is the next applications of visible LEDs? Currently, a considerable interest is full-color displays by RGB micro-LEDs. Tiny LED chips on the micrometer scale can adopt to all displays including ultra-high-definition television, smartphones, smartwatches, virtual reality (VR), and augmented reality (AR). The InGaN-based light-emitting devices are attractive for the next generation of displays by micro-LED chips because the III-nitride materials can emit RGB colors by tuning the material compositions. InGaN-based LEDs can monolithically stack during the material growth. In this talk, recent progress of the development of InGaN-based red LEDs will be presented.

Brief Biography

Daisuke Iida is a Senior Research Scientist at Energy Conversion Devices and Materials (ECO Devices) Laboratory in the Division of Computer, Electrical and Mathematical Sciences & Engineering (CEMSE). He holds a Ph.D. in Materials Science and Engineering from Meijo University in 2011. Afterward, he held postdoctoral and visiting researcher positions at Meijo University and Technical University of Denmark. Then, he worked as an assistant professor at Tokyo University of Science from 2014 to 2017. His research interest is III-nitride semiconductors-based optoelectronic devices, especially the MOCVD growth of InGaN and its applications. He has author/co-authored more than 100 publications on topics related to III-Nitride crystal growth, optical and electrical devices.