GaN-based power devices and power module

Overview

Abstract

Gallium nitride (GaN)-based power device, e.g. Schottky barrier diodes (SBDs) and high electron mobility transistors (HEMTs), have attracted considerable research interest and well recognized as the next generation high power and high temperature devices, owing to their ultralow conduction loss and fast switching under high voltage and high frequency operations. In this work, both vertical GaN Schottky barrier diodes (SBDs), vertical PN diodes and AlGaN/GaN HEMTs on free-standing wafers are demonstrated. The fabricated FS-GaN SBDs show the highest Ion/Ioff current ratio of ~2.3×1010 among the GaN SBDs reported in the literature. The vertical GaN PN diode in this work shows turn-on voltage Von of ~3.3-3.4 V, on/off current ratio of ~2.7x107, and ideal factor n of ~2.1. Due to the extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a record low SS (~60 mV/decade), low hysteresis of 54 mV, and high peak electron mobility μeff of ~1456 cm2V-1s-1. In the end, we will also show the progress of GaN-based DC/DC power module for high frequency and low power application in our group

Brief Biography

Dr. Liu Xinke received the Bachelor of Applied Science (Hons) degree in Material Science from National University of Singapore (NUS) in 2008, the Graduate Certificate for Management of Technology Program from NUS in 2012, and the Ph.D degree under Prof. Yeo Yee-Chia and Prof. Tan Leng-Seow in Electrical and Computer Engineering from NUS in 2013. Currently, he is an Assistant Professor in Shenzhen University, and his research interest focus on hexahedral semiconductor materials and devices, e.g. GaN and 2D (MoS2, BP etc).  He has authored or co-authored ~98 journal and conference papers, and hold six CN patents. He was conferred the “Shenzhen peacock Plan B” award in 2014, and “Outstanding youth of Litchi University” in 2016.

Refreshments: Coffee will be provided