Semi-Talk: III-Nitride Semiconductor Photonics and Nanoelectronics
Dr. Jing Zhang is currently the Kate Gleason Endowed Assistant Professor in the Department of Electrical and Microelectronic Engineering at Rochester Institute of Technology. She obtained B.S. degree in Electronic Science and Technology from Huazhong University of Science and Technology (2009), and Ph.D. degree in Electrical Engineering from Lehigh University (2013). Dr. Zhang’s research focuses on developing highly efficient III-Nitride and GaO semiconductor based photonic, optoelectronic, and electronic devices. Her research group is working on the development of novel quantum well active regions and substrates for enabling high-performance ultraviolet and visible LEDs/ lasers, as well as engineering of advanced device concepts for nanoelectronics.
Overview
Brief Biography
Dr. Jing Zhang is currently the Kate Gleason Endowed Assistant Professor in the Department of Electrical and Microelectronic Engineering at Rochester Institute of Technology. She obtained B.S. degree in Electronic Science and Technology from Huazhong University of Science and Technology (2009), and Ph.D. degree in Electrical Engineering from Lehigh University (2013). Dr. Zhang’s research focuses on developing highly efficient III-Nitride and GaO semiconductor based photonic, optoelectronic, and electronic devices. Her research group is working on the development of novel quantum well active regions and substrates for enabling high-performance ultraviolet and visible LEDs/ lasers, as well as engineering of advanced device concepts for nanoelectronics. Dr. Zhang has published more than 30 refereed journal papers and 65 conference proceedings including invited talks. She is a recipient of Texas Instruments/Douglass Harvey Faculty Development Award, and National Science Foundation (NSF) CAREER Award.
