*Refreshments: snacks and drinks. Lunch is served at 11:45 am.
Integration of renewable energy sources with automotive electronics and EVs demands highly efficient power electronic converters capable of handling kilovolts of grid supply. Furthermore, energy-saving initiatives demand fast switching power electronic devices. Both these demands mandate semiconductor power devices that offer lower ON-state resistance, higher OFF-state breakdown voltage, and fast switching capabilities. Moreover, these technologies require monolithic/heterogeneous integration with silicon logic for highly efficient power management integrated circuits. While Si- and SiC-based power devices are already commercially available; (ultra) wide-bandgap semiconductors like GaN, AlGaN, and β-Ga2O3 offer a higher Baliga Figure of Merit ─ a number indicating the suitability of a semiconductor for high-power applications. Unfortunately, realizing commercial-grade (ultra)wide semiconductor devices is still a major challenge due to numerous factors.
In this talk, Dr. Sarkar will introduce the history and concepts of power semiconductor devices. A special emphasis will be laid on understanding the power semiconductor device-design keeping the applications in perspective. Apart from covering traditional power electronic devices, Dr. Sarkar will also introduce emerging (ultra)wide power semiconductor devices that are expected to occupy a large market share, and their challenges. The core concepts will be thoroughly discussed with the help of examples and interactive discussions.
Dr. Biplab Sarkar is an Assistant Professor at the Indian Institute of Technology (IIT) Roorkee. He is currently involved in the development of commercial-grade (ultra)wide bandgap semiconductor based electronic devices. He completed his PhD from NC State University, the USA in 2015 where he worked on semiconductor memory devices. Later on, he also did postdoctoral research at NC State University in the area of wide & ultrawide bandgap semiconductor devices. His research expertise encompasses device processing, electrical-&-physical characterization, and device modeling. He has demonstrated bulk epitaxial growth methods to achieve high crystalline quality GaN and AlGaN films. Apart from nitride semiconductors, he has also demonstrated near-ideal and homogeneous Schottky diodes using β-Ga2O3 films grown using the Czochralski method. Over the past few years, he has demonstrated high brightness LEDs, self-powered photodiodes, high voltage Schottky diodes, and AlGaN/GaN HEMTs for RF applications. He has served as a committee member of the 2020 UV light emitters roadmap. He was invited to be a panelist in the power electronic device segment of the VAIBHAV Summit 2020 organized by the Prime Minister’s Office, Govt. of India. He is a recipient of the prestigious JSPS Fellowship, 2022. He has published more than 35 journal articles and holds visiting faculty status at the NC State University.