Details

​Resistive random access memory (RRAM): formation/disruption of a conductive filament (CF) in resistive switching (RS) layer: low/high resistance states(LRS/HRS); OXRAM: oxygen vacancies based filament; Conductive Bridging-RAM (CBRAM): the dissolution of an Ag or Cu active electrode CBRAM technology has shown considerable progress in recent years due to key advantages such as scalability, low-voltage, largest Roff/Ron

We are interested in the following topics:

(a)Device optimization: High On/Off ration, high nonlinearity factor, reliability improvement
(b)3-D integration of memory: selector for cross-point array
(c)Reconfigurable interconnect
An artificial synapse element for the implementation of neuromorphic computing