Enhancement of Endurance in HfO2-Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer

Bibliography:

U. Chand, M. Alawein, H. Fariborzi, “Enhancement of Endurance in HfO2-Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer,” Electrochemical Science and Technology (ECS) Transactions, 77 (11), 1971-1976, July 2017.

Authors:

U. Chand, M. Alawein, H. Fariborzi.

Keywords:

ReRAM

Year:

2017