Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device

Bibliography:

U. Chand, D. Berco, R. Li, M. Alawein, H. Fariborzi, “Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device” IEEE Electron Devices Technology and Manufacturing Conference (EDTM-2018)Kobe, Japan, 2018.​

Authors:

U. Chand, D. Berco, R. Li, M. Alawein, H. Fariborzi.

Keywords:

ReRAM

Year:

2018