Improved circuit model for all-spin logic

2016-01-07 - 14:47

‌Bibliography:

Meshal Alawein and Hossein Fariborzi, "Improved circuit model for all-spin logic," in Proc. 12th IEEE/ACM Int. Symp. Nanoscale Architectures, pp. 135-140, 2016

Authors:

Meshal Alawein, And Hossein Fariborzi.

Keywords:

Equivalent circuit models, spin dissipation, all-spin logic (ASL), spin-transfer torque (STT), spintronics.

Year:

2016

Abstract:

Spintronic devices are prime candidates for Beyond CMOS era due to their potential for low power consumption and high-density computation and storage. All-spin logic (ASL) is among the most promising spintronic logic switches. Previous attempts to model ASL in the linear and diffusive regime either neglect the dynamic characteristics of the transport or do not provide a scalable and robust platform for full micromagnetic simulations and inclusion of other effects like spin Hall effect (SHE) and spin-orbit torque (SOT). In this paper, and based on a finite difference scheme, we propose an improved self-consisting magnetization dynamics/time-dependent carrier transport model that captures the main characteristics of ASL devices.