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Chun-Yang Huang worked as a Postdoctoral Fellow at Integrated Circuits and Systems Research Group with Prof. Hossein Fariborzi at King Abdullah University of Science and Technology (KAUST).

Research Interests

Chun-Yang's research interests included Advanced CMOS Technology (28/22nm transistor, 14nm FinFET and beyond), Nonvolatile Memory (Resistive Switching Memory: ReRAM, Conductive Bridging Memory: CBRAM, SONOS Memory, and Flash Memory), Thin Film Transistor (TFT) and Oxide-based Semiconductor.

Conference Papers:

  • Umesh Chand, Chun-Yang Huang, and Tseung-Yuen Tseng, “Switching Properties in ZrO2-Based Resistive Switching Device,” International Conference on Solid-State Devices and Materials (SSDM 2014), Tsukuba, Ibaraki, Japan, Sep. 8-11, 2014.
  •  Chun-Yang Huang, Umesh Chand, Chun-An Lin, and Tseung-Yuen Tseng, “Reduced the Oxygen Ions Consumption during Endurance Test in ZrOx/HfOy Bilayer RRAM Device,” The 3rd International Symposium on Next-Generation Electronics (ISNE 2014), Taoyuan, Taiwan, May 7-10, 2014.
  • Chun-Yang Huang, Umesh Chand, and Tseung-Yuen Tseng, “Improvement of Unipolar Resistive Switching Characteristics in Ti Embedded ZrO2 Thin Film,” 2014 2nd International Conference on Materials and Manufacturing Research (ICMMR 2014), Guilin, China, Mar. 29-30, 2014.
  •  Chun-Yang Huang, Jheng-Hong Jieng, Tseung-Yuen Tseng, “Stable Resistive Switching Characteristics of Al2O3 Layer Inserted in HfO2 Based RRAM Devices,” The 10th Pacific Rim Conference on Ceramic and Glass Technology including GOMD 2013 - Glass & Optical Materials Division Annual Meeting (PACRIM 10), San Diego, CA, Jun. 2-7, 2013.
  • Chun-Yang Huang, Jheng-Hong Jieng, Wen-Yueh Jang, Chen-His Lin, and Tseung-Yuen Tseng, “Improved the Resistive Switching Characteristics and Thermal Stability by Inserting Al2O3 Layers in HfO2-Based RRAM Devices,” Symposium on Nano Device Technology 2013 (SNDT 2013), Hsinchu, Taiwan, Apr. 25-26, 2013.

Patents:

  •  Tseung-Yuen Tseng, Chun-Yang Huang, Ming-Chi Wu, “Non-volatile memory and method for fabrication the same,” Taiwan Patent I533409, May 11, 2016.
  •  Tseung-Yuen Tseng, Chun-Yang Huang, Chung-Yu Huang, Tsung-Ling Tsai, “Resistive memory and fabrication thereof,” Taiwan Patent I520394, Feb. 1, 2016.
  •  Tseung-Yuen Tseng, Chun-Yang Huang, Jheng-Hong Jieng, “Memory device and manufacturing method thereof,” Taiwan Patent I500193, Sep. 11, 2015.
  • Tseung-Yuen Tseng, Chun-Yang Huang, Chung-Yu Huang, Tsung-Ling Tsai, “Resistive random access memory and manufacturing method thereof,” China Patent CN104617218 A, May 13, 2015.
  • Tseung-Yuen Tseng, Chun-Yang Huang, Jheng-Hong Jieng, “Memory device and manufacturing method thereof,” China Patent CN 104143605 A, Nov. 12, 2014.
  • Tseung-Yuen Tseng, Chun-Yang Huang, Ming-Chi Wu, “Non-volatile memory and manufacturing method thereof,” China Patent CN 103378103 A, Oct. 30, 2013.

Education Profile

  • Ph.D. in Electrons Engineering, National Chiao Tung University (NCTU), Taiwan, October 2014.
  • M.Sc. in Engineering and System Science, National Tsing Hua University (NTHU), Taiwan, July 2009.
  • B.Sc. in Physics, National Sun Yat-Sen University (NSYSU), Taiwan, June 2007.

Professional Memberships

  • Staff Engineer, Logic Division, Advanced Technology Development (ATD-Logic), United Microelectronics Corporation (UMC), Taiwan, Jan. 2015 – Dec. 2017.

Awards and Distinctions

  • Outstanding Contribution in Reviewing for Microelectronics Reliability, Elsevier journal, Dec. 2017.​
  • United Microelectronics Corporation (UMC) Spot Award: MRVL HPC+ SRAM TC excellent yield demonstration on 1st Si, 2016.
  • United Microelectronics Corporation (UMC) Excellent Technologist Scholarship: Recognition of the outstanding academic performance, 2010 - 2012.

Selected Publications

Umesh Chand, Kuan-Chang Huang, Chun-Yang Huang, Chia-Hua Ho, Chen-Hsi Lin, and Tseung-Yuen Tseng, “Investigation of Thermal Stability and Reliability of HfO2 Based Resistive Random Access Memory Devices with Cross-bar Structure,” J. Appl. Phys., vol. 117, no. 18, pp. 184105 1–184105-6, May 2015.
DOI
10.1063/1.4921182
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Umesh Chand, Chun-Yang Huang, and Tseung-Yuen Tseng, “Mechanism of High Temperature Retention Property (up to 200 oC) in ZrO2 Based Memory Device with Inserting ZnO Thin Layer,” IEEE Electron Device Lett., vol. 35, no. 10, pp. 1019–1021, Aug. 2014.
DOI
10.1109/LED.2014.2345782
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Chun-Yang Huang, Yen-Ting Ho, Chung-Jung Hung, and Tseung-Yuen Tseng, “Compact Ga-Doped ZnO Nanorod Thin Film for Making High Performance Transparent Resistive Switching Memory,” IEEE Trans. Electron Devices, vol. 61, no. 10, pp. 3435–3441, Aug. 2014.
DOI
10.1109/TED.2014.2343631
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Chun-Yang Huang, Chung-Yu Huang, Tsung-Ling Tsai, Chun-An Lin, and Tseung-Yuen Tseng, “Switching Mechanism of Double Forming Process Phenomenon in ZrOx/HfOy Bilayer Resistive Switching Memory Structure with Large Endurance,” Appl. Phys. Lett., vol. 104, no. 6, pp. 062901 1–062901-4, Feb. 2014.
DOI
10.1063/1.4864396
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Chun-Yang Huang, Jheng-Hong Jieng, Wen-Yueh Jang, Chen-Hsi Lin, and Tseung-Yuen Tseng, “Improved Resistive Switching Characteristics by Al2O3 Layers Inclusion in HfO2-Based RRAM devices,” ECS Solid State Lett., vol. 2, no. 8, pp. P63–P65, May 2013.
DOI
10.1149/2.006308ssl
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Publications

Google Scholar Citations
Publications on ResearchGate
Principal Investigator
KAUST CEMSE EE Hossein Fariborzi

Hossein Fariborzi

Adjunct Professor, Electrical and Computer Engineering
Professors