Spintronics is an emerging and rapidly evolving research field that has a great potential to overcome the challenges confronting CMOS by introducing the electron spin, in addition to electron charge, as an extra degree of freedom. Traditional spintronic devices, the fundamental of which is a magnetic tunnel junction (MTJ), are based on the alignment of spins in magnetic layers, manipulated by external magnetic fields as well as spin-polarized currents. Thus, employing the non-volatile nature of layer  magnetization and its direction to represent the bit state, spintronics provides power-efficient devices that are attractive for different applications.
 
Our research group focuses on both modelling and fabrication of MTJ devices for memory, sensor and logic applications."