"Researchers based in Saudi Arabia and USA have integrated a waveguide photodetector (WPD) with a 405nm laser diode (LD) using free-standing semi-polar gallium nitride (GaN) technology."
"The team comments: “The increased cutoff frequency of the WPD is associated with the reduced device size owing to the narrow ridge design and the improved responsivity of the semi-polar plane WPDs. The high-speed WPD suggests its potential as an integrated receiver for on-chip communication and VLC applications.”
Read more in Semiconductor Today
Semipolar III-nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system
Chao Shen, Changmin Lee, Edgars Stegenburgs, Jorge Holguin Lerma, Tien Khee Ng, Shuji Nakamura, Steven P. DenBaars, Ahmed Y. Alyamani, Munir M. El-Desouki, and Boon S. Ooi
Applied Physics Express, 10(4), 042201 (2017)
DOI: 10.7567/APEX.10.042201
HDL: 10754/622986
http://www.semiconductor-today.com/news_items/2017/mar/kaust_240317.shtml
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