Education Profile

  • Doctor of Philosophy (Ph.D.) in Electrical Engineering, KAUST (2013 - 2017).
  • Masters of Science (MS) in Electrical Engineering, University of Texas (2010).
  • Bachelor of Science (BSE) in Electrical Engineering, University of Texas (2008).

Professional Profile

  • Apr 2017 – Ph.D. Degree, Electrical Engineering, KAUST. Studied III-Nitrides materials for optoelectronic devices. Studied the growth of III-Nitrides materials using Molecular Beam Epitaxy (MBE).
  • Sep 2011 – Dec 2012 Ph.D. Student, Electrical Engineering, KAUST. Studied optoelectronic devices. Worked on Plasmonic Thin Film Solar Cells.
  • Jan 2010 – May 2010 Research Assistant, Electrical and Computer Engineering, UT Austin.
  • Sep 2009 – Jan 2010  Teaching Assistant, Electrical and Computer Engineering, UT Austin.

Scientific and Professional Membership

  • Member of the Institute of Electrical and Electronics Engineers (IEEE).
  • Member of the Optical Society of America (OSA).
  • Member of the Society of Photo-optical Instrumentation Engineers (SPIE).

​Bilal Janjua obtained a Ph.D. degree in Electrical Engineering under the supervision of Professor Boon Ooi at the King Abdullah University of Science and Technology (KAUST). Previously, 2008-2010, Bilal worked as a research scientist, in Prof Seth Bank group at the University of Texas at Austin (UT Austin). During this period at UT Austin, he helped the group set up an MBE system to study rare earth elements in the III-V materials system. For a semester, in his master’s program, Bilal worked as a Teaching Assistant for a graduate course on semiconductor nanostructures. Bilal received his MSE in Solid State Electronics and BSE in Telecom and VLSI design from UT Austin in 2009 and 2011 respectively. He completed his BSE and MSE degree with honors. Currently,  a Postdoc at the University of Toronto, Canada.

Research Interests

Bilal's research interests included Photonics, Molecular Beam Epitaxy, Large bandgap group-III nitride and Light sources​. His research area focused on the growth of the III-Nitride material system using Molecular Beam Epitaxy (MBE).