Mohammed Abdul Majid

About

Mohammed Abdul Majid was a Postdoctoral Fellow at Photonics Laboratory at King Abdullah University of Science and Technology (KAUST), where he worked on applying III/V semiconductor quantum dot/quantum well devices to applications such as biomedical imaging, optical communications to solid-state lighting. Mohammed received his M.Sc. degree in Electrical Engineering from King Fahd University of Petroleum and Minerals (KFUPM), Dhahran, Saudi Arabia in 2002. In 2011, he obtained his Ph.D. degree in Electronic and Electrical Engineering from the University of Sheffield in the U.K. From 2002-2008, he worked as a Lecturer at KFUPM, where he was involved in modeling and simulation of anti-resonant reflecting optical waveguides. He was an EPSRC Prize Postdoctoral Fellow at The University of Sheffield for one year (2011-2012), where he was involved in the research on molecular beam epitaxy quantum dot materials on GaAs substrates for active switching applications.

Currently, he is working as an Assistant Professor at Effat University, Saudi Arabia.

Research Interests

Mohammed's research interests included GaN-based Solid State Lighting, Strain engineered quantum dots lasers for long-wavelength emission, Superluminescent diode and its application to Optical coherence tomography (OCT) of eye and skin and Green Photonics (All-optical Switching).

Selected Publications

• M. A. Majid, M. Hugues, D. T. D. Childs, R. A. Hogg,“Effect of Deposition Temperature on the Opto-Electronic Properties of MBE Grown InAs QD Devices for Broadband Applications” Jpn. J. of Appl. Phys., vol. 51, no.2, pp. 02BG09-02BG09-4 (2012).DOI: 10.1143/JJAP.51.02BG09  (pdf).
• M. A. Majid, D.T.D Childs, H. Shahid, S.Chen, K. Kennedy, R. J. Airey, R. A. Hogg, E. Clarke, P. Spencer and R. Murray, “Excited State Bilayer Quantum Dot Lasers at 1.3 µm” Jpn. J. of Appl. Phys., vol. 50, no. 1, pp. 04DG10-04DG10-3 (2011) DOI: 10.1143/JJAP.50.04DG10 (pdf).
• M. A. Majid, D.T.D Childs, H. Shahid, S.Chen, K. Kennedy, R. J. Airey, R. A. Hogg, E. Clarke, P. Howe, P. Spencer and R. Murray“Towards 1550 nm GaAs-based Lasers Using InAs/GaAs Quantum Dot Bilayers” IEEE J. Sel. Topics Quantum Electron., vol. 17, no.5, pp. 1134-1342 (2011). DOI:10.1109/JSTQE.2011.2108270 (pdf).
• M. A. Majid, D.T.D Childs, K. Kennedy, R. J. Airey, R. A. Hogg, E. Clarke, P. Spencer and R. Murray, “O-band Excited State Quantum Dot Bilayer Lasers”App. Phys. Lett., vol. 99, no. 5, pp. 051101-051101-3 (2011). http://dx.doi.org/10.1063/1.3605590 (pdf).
• M.A. Majid, D.T.D. Childs, H. Shahid, R. Airey, K. Kennedy, R.A. Hogg, E. Clarke, P. Spencer and R. Murray,“1.52 µm electroluminescence from GaAs-based quantum dot bilayers” Electron. Lett., vol. 47, no.1, pp. 44-46 (2011). http://dx.doi.org/10.1049/el.2010.3203 (pdf).
• M. A. Majid, D. T. D. Childs, R. Airey, K. Kennedy, R. A. Hogg, E. Clarke, P. Spencer and R. Murray, “Strain Engineered Bilayers for Extending the Operating Wavelength of QD Lasers”, IET Optoelectron., vol. 5, no.3, pp. 100-104 (2011). DOI: 10.1049/iet-opt.2010.0041 (pdf).
• M. A. Majid, H. Shahid, S.Chen, D. T. D. Childs, R. J. Airey, K. Kennedy, R. A. Hogg, E. Clarke, P. Spencer and R. Murray, “Gain and absorption characteristics of bilayer quantum dot lasers beyond 1.3 μm” Novel In-Plane Semiconductor Lasers X, Proc. SPIE, vol.7953, pp. 795303-795303-7 (2011). http://dx.doi.org/10.1117/12.874214 (pdf).
• M. A. Majid, D. T. D. Childs, R. Airey, K. Kennedy, R. A. Hogg, E. Clarke, P. Spencer and R. Murray, “Bilayer for extending the wavelength of QD lasers” J. Phys.: Conf. Ser., vol. 245, no. 1, p. 012083 (2010). doi:10.1088/17426596/245/1/012083 (pdf).
• M. A. Majid, D.T.D. Childs, S. Chen, H. Shahid, K. M. Groom, K. Kennedy, R. A. Hogg, E. Clarke, P. Spencer, and R. Murray, “Gain Spectra Analysis of Bilayer Quantum Dot Lasers beyond 1.3µm” Photonics Global Conference (PGC), 2010 , vol., no., pp.1-4,  (2010). DOI:10.1109/PGC.2010.5706039 (pdf).
• P. Spencer, J. Shi, E. Clarke, R. Murray, M. A. Majid, D. T.D. Childs, R. Alexander, K. Groom and R. A. Hogg, “Dual-state lasing and the case against the phonon bottleneck", Proc. SPIE, vol. 7616, pp. 761606-761606-11 (2010). DOI: 10.1117/12.84563 (pdf).

Education Profile

• Ph.D. Electronic and Electrical Engineering (The University of Sheffield, UK).
• M.Sc. Electrical Engineering (KFUPM, KSA).
• B.E Electronics and Communication Engineering (Osmania University, India).

Professional Memberships

• Postdoctoral Research Fellow, King Abdullah University of Science and Technology (2012).
• Postdoctoral Research Fellow, The University of Sheffield (2011 - 2012).
• Lecturer, King Fahd University of Petroleum and Minerals (2002 - 2008).
• Research Assistant, King Fahd University of Petroleum and Minerals (2000 - 2002).