Mritunjay Kumar

Biography

Mritunjay Kumar is a Ph.D. candidate in Electrical Engineering at King Abdullah University of Science and Technology (KAUST), Saudi Arabia, under the supervision of Prof. Xiaohang Li. Before joining KAUST, he earned his Master of Technology from the Indian Institute of Technology (IIT) Dhanbad. His research focuses on developing advanced wide-bandgap semiconductor devices for extreme-temperature power electronics applications, addressing challenges such as threshold voltage instability and high gate leakage currents in GaN HEMTs through innovative materials and gate design techniques.

Mritunjay has made significant contributions to the field of power electronics for extreme temperature, as evidenced by publications in reputed journals such as Applied Physics Letters (APL) and Japanese Journal of Applied Physics (JJAP). His achievements include the development of a high-threshold voltage (7.4 V) enhancement-mode GaN HEMT and the implementation of bi-layer gate stacks for stable operation at temperatures up to 450°C. His work also explores heterogeneous integration, such as combining GaN HEMTs with indium oxide-based driver circuits and gallium oxide transistors, demonstrating stable operation in harsh environments.