Rami T. ElAfandy

About

Rami ElAfandy obtained a Ph.D. degree in Electrical Engineering under the supervision of Professor Boon Ooi at King Abdullah University of Science and Technology (KAUST). His work was related to studying the physical properties (optical, electrical and thermal) of flexible gallium nitride (GaN) nanomembranes and engineering these properties for biological and energy applications. He developed thermal biosensors for living cells and successfully measured and differentiated between different cancer cells based on their thermal transport properties. He also worked on increasing hydrogen photo-generation using indium gallium nitride (InGaN) nanowire membranes. He received his Master’s Degree of Science in Electrical engineering with a concentration in electromagnetics and photonics from KAUST in which he studied the effect of 2 dimensional and 3-dimensional confinement on the optical and thermal properties of InGaN quantum dots for efficient white light generation. Rami obtained his bachelor of science in Electrical engineering with a minor in computer science from the American University in Cairo, Egypt in 2009. Currently, he is working as a Postdoctorate Fellow at Yale University, USA.

Research Interests

Rami's research interests included Clean energy generation, Flexible optoelectronics and Biophotonics.

Selected Publications

Patents

• ElAfandy, R.T., Ooi, B.S. “Defect free single crystal thin layer”, U.S. Patent 14/775,656, Sept. 11 2015.
• Ooi, B.S., Majid, M.A. and ElAfandy, R.T. “Controlling the emission wavelength in group III-V semiconductor laser diodes”, U.S. Provisional Patent 62184111, Jun. 24 2015.
• ElAfandy, R.T., Ooi, B.S. “A high resolution, nanomembrane-based, thermal diffusivity biosensor for living cells”, U.S. Provisional Patent 62280224, Jan. 19 2016.
• ElAfandy, R.T., Ebaid, M., Ooi, B.S., NG, T.K., “Flexible articial leaves for hydrogen production and methods for making” Provisional Patent 62384882, Sept. 08 2016.

Journal Publications

• ElAfandy, R.T., AbuElela, A.F., Mishra, P., Janjua, B., Oubei, H.M., Büttner, U., Majid, M.A., Ng, T.K., Merzaban, J.S. and Ooi, B.S., “Nanomembrane-Based, Thermal-Transport Biosensor for Living Cells”, Small, (2016) doi:10.1002/smll.201603080.
• Janjua, B., Ng, T.K., Zhao, C., Parabaswara, A., Consiglio, G.B., Priante, D., Shen, C., ElAfandy, R.T., Anjum, D.H., Alhamoud, A.A., Alatawi, A.A., Yang, Y., Alyamani, A.Y., El-Desouki, M.M., Ooi, B.S., “True Yellow Light-emitting Diodes as Phosphor for Tunable Color-Rendering Index Laser-based White Light”, ACS Photonics, (2016).
• Omran, H., ElAfandy, R.T., Arsalan, M., and Salama, K.N., “Direct Mismatch Characterization of femto-Farad Capacitors”, IEEE transactions on circuits and systems II, 63, 2, 151-155, (2016).
• Zhao, C., Ng, T.K., ElAfandy, R.T., Prabaswara, A., Consiglio, G.B., Ajia, I.A., Roqan, I.S., Janjua, B., Shen, C., Eid, J., Alyamani, A.Y., El-Desouki, M.M., and Ooi. B.S. “Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics”. Nano Letters 16 (7), 4616-4623 (2016).
•  ElAfandy, R.T., Majid, M. A., Ng, T. K., Zhao, L., Cha, D. and Ooi, B. S., “Exfoliation of Threading Dislocation-Free, Single-Crystalline, Ultrathin Gallium Nitride Nanomembranes”. Adv. Funct. Mater. 24, 16, 2305 (2013).
• Mishra, P., Janjua, B., Ng, T.K., Anjum, D.H., ElAfandy, R.T., Prabaswara, A., Shen, C., Salhi, A., Alyamani, A.Y., El-Desouki, M.M., and Ooi, B.S., "On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy," Opt. Mater. Express 6, 2052-2062 (2016).
• Slimane, A.B., Najar, A., ElAfandy, R.T. , San-Román-Alerigi, D.P., Anjum, D., Ng, T.K., and Ooi, B. S. "On the phenomenon of large photoluminescence red shift in GaN nanoparticles". Nanoscale Research Letters (2013), 8:342.
• ElAfandy, R.T., Ng, T.K., Cha, D., Zhang, M., Bhattacharya P. and Ooi, B.S., “Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots”, J. Appl. Phys. 112, 063506 (2012).

Conference Presentations

• ElAfandy, R.T., Mishra, P., Majid, M. A., Al-Jabr, A., Ng, T. K., Ooi, B. S., “Optical Modulation Response of Free-Standing Gallium Nitride Nanomembranes to Uniaxial Applied Stress Field ”, 7th International Conference on Materials for Advanced Technologies (ICMAT), Singapore. (2015).
• ElAfandy, R.T., Majid, M. A., Ng, T. K., Zhao, L., Cha, D. and Ooi, B. S. “Chemical exfoliation and optical characterization of threading-dislocation-free gallium-nitride ultrathin nanomembranes”, the International Society for Optics and Photonics (SPIE) Photonics Asia, Beijing (2014).
• ElAfandy, R.T., and Ooi, B. S., “Towards Energy Efficient Materials: Exfoliation of Threading Dislocation free Gallium Nitride Nanomembranes”. KAUST-NSF Conference on Electronic Materials, Devices, and Systems for a Sustainable Future, KAUST, Saudi Arabia, 9-Feb. (2013). (Best poster award).
• ElAfandy, R.T., Majid M.A., Ng, T.K., and Ooi, B., "Exfoliation of dislocation free single-crystalline GaN layer", 7th International Conference on Materials for Advanced Technologies (ICMAT), Singapore. ICMAT13-A-3326. (2013). (Invited talk).
• Slimane, A. B., ElAfandy, R.T., Najar, A., San-Roman-Alerigi, D. P., Anjum, D., Ng, T. K., Ooi, B. S., “Observation of Ultra-broadband Emission from Highly Disordered GaN Nanoparticles”, International Conference on Materials for Advanced Technologies (ICMAT), Suntec, Singapore, (2013).
• Slimane, A. B., ElAfandy, R.T., Gasim, A., Najar, A., Majid, M.A., Ng, T. K.  and Ooi, B. S., “III-Nitride nanostructures for Solid State Lighting” Invited talk in Saudi International Electronics, Communications and Photonic Conference (SIECPC), Riyadh, KSA, (2013).
• Ooi, B.S., Najar, A., Slimane, A.B., ElAfandy, R.T., Gasim, A., Li, Q. and Ng, T.K. “GaN-based Nano-Pores and NWs Fabricated Using Electroless Chemical Etching Process”, ECS Meeting Abstr. MA2012-01 822. (2012).
• ElAfandy, R.T., Ng, T.K., Cha, D., Zhang, M., Bhattacharya P. and Ooi, B.S., “Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots”, HONET, pp. 201 – 204. (2011).

Education Profile

• PhD student, King Abdullah University of Science and Technology (KAUST), Computer, Electrical and Mathematical Sciences and Engineering, Concentration: Electrophysics.
• Master’s Degree, King Abdullah University of Science and Technology (KAUST), Major: Electrical Engineering, Concentration: Electromagnetics and photonics.
• Bachelor of Science, the American University in Cairo, Major: Electronics Engineering, Minor: Computer Science.