Molecular beam epitaxy (MBE) for light-emitting applications is an innovative technology that will change the way we understand and use light.
Tien Khee Ng Senior Research Scientist, Photonics Laboratory

Tien Khee is currently researching into molecular beam epitaxy (MBE) grown group-III nitride based quantum structures for light-emitting applications at KAUST. He has authored, co-authored and delivered more than 200 journal articles, invited talks, and conference articles receiving over 1500 citations. He is the center manager and one of the co-principal investigators for KACST Technology Innovation Center (TIC) for Solid State lighting at KAUST. He received his Ph.D. in electrical and electronics engineering from Nanyang Technological University (NTU), Singapore, investigating on molecular beam epitaxy (MBE) grown small bandgap nitride semiconductor. His M.Eng. research in the same laboratory focused on electron cyclotron resonance plasma etching of As-based and P-based III-V semiconductor for eventual applications in heterojunction bipolar transistors. Serving the scientific community, he contributed as reviewers for various international journals, such as:

  • ACS Nano Letters
  • ACS Advanced Functional Materials
  • Scientific Reports
  • RSC Nanoscale
  • Applied Nanoscience
  • Journal of the Electrochemical Society
  • Journal of Crystal Growth
  • Nanotechonology
  • Photonics Technology Letters
  • Photonics Journal
  • Optics Letters
  • Superlattices and Microstructures
  • Applied Physics Letters

As a senior research scientist, he co-advises Ph.D. / Masters students working on MBE grown 2D quantum well and 3D nanowires emitters for broad gain, short reach communication NIR laser diodes, low polarization field nitride LEDs and laser diodes, laser-based smart solid-state lighting, and emitters epitaxy transfer onto conductive and/or flexible substrates. The long-term research goal targets the realization of narrow linewidth emitters, and wide-band nitride emitters spanning UV-blue-far red-NIR wavelengths. Depending on the quantum efficiency, the phosphide or arsenide broadband lasers will be integrated to realize this goal.

As the manager of the photonics laboratory, he involved in the early establishment of the laboratory, and currently overseeing new capability establishment, laboratory operational continuity, as well as internal and external research collaboration. He was also involved as a co-mentor for the Saudi-RSI Summer Internship Program (2011 and 2013) in KAUST upon which one of the high school interns received 3 S-RSI awards, published 1 IEEE HONET’2011 conference paper and co-authored a journal paper.

Prior to this in 2007-2009, he embarked upon a research fellow position at NTU conducting research into MBE grown GaAs nanowires, quantum-dots structures and dilute-nitride-antimonide solar cells using SiGe- and Si-based heterogeneous substrates.

Previously in 2004-2006, he worked as an engineer for Tinggi Technologies, a start-up company in Singapore designing and fabricating high power GaN blue LEDs on highly conductive substrates. Tien Khee later served as a member of technical staff and as thin film process manager in the same company.