Jose Manuel Taboada Vasquez
Jose's research focuses on advancing gallium oxide (Ga₂O₃) diode technology for high-power electronics by exploring innovative fabrication strategies and performance enhancements to overcome its current limitations in electron mobility and thermal conductivity.
Biography
In 2019, Jose Manuel Taboada completed his bachelor's degree in Nanofabrication and Microelectronics at the National Autonomous University of Mexico (UNAM). He then obtained a master's degree in Electrical Engineering from King Abdullah University of Science and Technology (KAUST) in 2022, where he is currently pursuing a Ph.D. His doctoral research focuses on the simulation, design, fabrication, and testing of gallium oxide (Ga₂O₃) based diodes.
Research Interests
Jose Manuel Taboada's research interests include advanced semiconductors, Nanometric fabrication, and characterization processes, and data analysis.
Education
- Master of Science (M.S.)
- Electrical and Computer Engineering, King Abdullah University of Science and Technology (KAUST), Saudi Arabia, 2022
- Bachelor of Science (B.S.)
- Nanofabrication and Microelectronics, National Autonomous University of Mexico (UNAM), Mexico, 2019
