Abstract
In this talk, we will discuss the modeling and simulation of semiconductor equations using three different formalisms. We will also describe the finite volume method and the Hybridizable Discontinuous Galerkin method as applied to semiconductor equations. These methods have proven to be highly effective in modeling semiconductor behavior, and have been used in a variety of applications such as integrated circuits, solar cells, and transistors. We will provide insights into the fundamental concepts behind these models and demonstrate their effectiveness through numerical simulations.
Brief Biography
Nella Rotundo is an assistant professor at the University of Florence, Italy, working on the mathematics of semiconductors. Some of her recent research interests include the mathematical modeling of semiconductors, their numerics using finite elements methods, doping reconstruction, photovoltage scanning method etc.