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Meshal Alawein obtained his Master's degree in Electrical Engineering under the supervision of Prof. Hossein Fariborzi in his research group Integrated Circuits and Systems Group (ICS) at King Abdullah University of Science and Technology (KAUST). His work included circuit modeling of spintronic devices as well as theoretical and experimental studies multistate nanomagnetic logic and memory devices. Meshal (S’16–M’18) received a B.Sc. degree in Electrical Engineering from King Fahd University of Petroleum and Minerals, Dhahran, Saudi Arabia, in 2014. Currently, he is a Ph.D. student at the Electrical Engineering and Computer Sciences Department of the University of California, Berkeley. 

Thesis Title: Circuit Simulation of All-Spin Logic

Research Interests

Meshal's research interests include spin orbitronics, spin caloritronics, and antiferromagnetic spintronics.​

Selected Publications

Umesh Chand, Md Abdullah Al Hafiz, Meshal Alawein, and Hossein Fariborzi, “Stable switching in HfO2-based crossbar conducting-bridge resistive switching memory device,” in ECS Meeting Abstracts, p. 2060, 2017.

Education Profile

  • M.S. in Electrical Engineering, King Abdullah University of Science and Technology Thuwal, Saudi Arabia. [GPA: 4.0/4.0] (Aug 2014-Jun 2016).
  • B.S. in Electrical Engineering with minor in Mathematics, King Fahd University of Petroleum and Minerals Dhahran, Saudi Arabia. [GPA: 3.89/4.0 (major), 3.9/4.0 (minor)] (Aug 2009-Aug 2014).
  • Senior project: "Indoor Localization with Limited Deployment Effort"

Professional Memberships

  • Institute of Electrical and Electronics Engineers (IEEE), student member.
  • Institute of Mathematics and its Applications, student member.
  • IEEE Young Professionals.

Selected Publications

Meshal Alawein, and Hossein Fariborzi, “Circuit models for spintronic devices subject to electric and magnetic fields,” IEEE J. Exploratory Solid-State Comput. Devices Circuits, vol. 4, pp. 60–68, 2018
DOI
10.1109/JXCDC.2018.2876456
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Meshal Alawein, and Hossein Fariborzi, “A general circuit model for spintronic devices under electric and magnetic fields,” in Proc. 47th European Solid-State Device Research Conf., pp. 94–97, 2017
DOI
10.1109/ESSDERC.2017.8066600
Altmetrics
Meshal Alawein, and Hossein Fariborzi. "Improved circuit model for all-spin logic." IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2016.
Handle
10754/656026
DOI
10.1145/2950067.2950075
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Meshal Alawein and Hossein Fariborzi, “Dynamic circuit model for spintronic devices,” Procedia Engineering, vol. 168, pp. 966–970, 2016.
DOI
10.1016/j.proeng.2016.11.317
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eshal Alawein, “Circuit simulation of all-spin logic,” M.S. thesis, Elect. Eng. Program, King Abdullah Univ. of Sci. and Technol., Thuwal, Saudi Arabia, 2016.
Handle
10754/609600
DOI
10.25781/KAUST-U0BZD
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Shaik Wasef, Selma Amara, Meshal Alawein, and Hossein Fariborzi. “Multibit memory cells based on spin-orbit torque driven magnetization switching of nanomagnets with configurational anisotropy," in Proc. 2nd IEEE Electron Devices Technology and Manufacturing Conf., pp. 298–300, 2018.
Handle
10754/628839
DOI
10.1109/EDTM.2018.8421415
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Ride Bu, Selma Amara, Meshal Alawein, and Hossein Faribrozi, “Highly-sensitive magnetic tunnel junction based flow cytometer,” in Proc. IEEE Int. Symp. on Medical Measurements and Applications, 2018.
Handle
10754/628472
DOI
10.1109/memea.2018.8438652
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Selma Amara, Ride Bu, Meshal Alawein, and Hossein Fariborzi, “MgO-based magnetoresistive biosensor for magnetically labeled cells detection,” in Proc. International Magnetics Conf., p. 1, 2018.
Handle
10754/655995
DOI
10.1109/INTMAG.2018.8508528
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de Bu, Selma Amara, Meshal Alawein, Nouf Alsharif, Mohammed Asadullah Khan, Yan Wen, Xixiang Zhang, and Hossein Faribrozi, “An integrated and highly-sensitive magnetic tunnel junction cytometer,” International Conference on Magnetism (accepted for publication).
Handle
10754/628472
DOI
10.1109/MeMeA.2018.8438652
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Selma Amara, Ulan Myrzakhan, Meshal Alawein, Abdulmohsen Alsaui, and Hossein Fariborzi, “Spin-orbit torque driven multi-state device for memory applications ,” 2018 IEEE International Electron Devices Meeting (accepted for publication).
Handle
10754/655944
DOI
10.1109/EDTM.2019.8731027
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Umesh Chand, Meshal Alawein, and Hossein Fariborzi. “Enhancement of endurance in HfO2-based CBRAM device by introduction of a TaN diffusion blocking layer,” in ECS Transactions, vol. 77, pp. 1971–1976, 2017.
Handle
http://hdl.handle.net/10754/625721
DOI
10.1149/07711.1971ecst
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Umesh Chand, Den Berco, Ren Li, Meshal Alawein, and Hossein Fariborzi, “Experimental and simulation study of resistive switching properties in novel Cu/Poly-Si/TiN CBRAM crossbar device," in Proc. 2nd IEEE Electron Devices Technology and Manufacturing Conf., pp. 217–219, 2018.
Handle
10754/630567
DOI
10.1109/EDTM.2018.8421452
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Publications

Also view Publications in the KAUST Repository.
Publications on ResearchGate
Publications on Orcid
Academic Advisors
KAUST CEMSE EE Hossein Fariborzi

Hossein Fariborzi

Adjunct Professor, Electrical and Computer Engineering
Professors