Semiconductor Epitaxy for Micro-LEDs and Novel Lasers

Overview

Abstract

InGaN-based monolithic RGB LED arrays would be the key to producing micro-LED displays. The micro-LED displays will reduce the frequency of battery charging for mobiles and make head-mount displays thinner and lighter weight. It will become a game changer. The InGaN material system is only the material that can cover RGB full-color regions. Blue and green LEDs were commercialized a long time ago, however, InGaN-based red LEDs are still a challenge. A point of such development is the semiconductor epitaxy. Metalorganic vapor-phase epitaxy (MOVPE) of InGaN will be introduced. Applying this InGaN-MOVPE, we can approach novel yellow semiconductor lasers. The yellow region is the missing part of the visible range in semiconductor lasers so far.

Brief Biography

Kazuhiro Ohkawa is a professor of Electrical and Computer Engineering, Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) division at King Abdullah University of Science and Technology (KAUST). Principle investigator of the Energy Conversion Devices and Materials (ECO Devices) lab at KAUST. He is a Fellow of the Japan Society of Applied Physics. He is also a professor (lifelong title) of Physics at the University of Bremen (Germany), a guest professor at Xiamen University (China), and a visiting professor at Mie University (Japan). He is interested in optical devices and material science. He is familiar with wide-bandgap materials (III-Nitrides and II-VI compounds) and MOCVD & MBE technologies. He invented the current n- & p-doping technologies for II-VI materials such as nitrogen plasma in MBE. Nitrogen plasma became a standard in MBE for nitride semiconductors. He developed a simulation technology for nitride MOCVD. Many industries in Asia and Europe have introduced that simulation already. Nitride photo-catalysis which is getting popular in the world is also his invention.