Gallium Oxide Diodes: Past , Present and Future Applications
This talk will explore recent advancements in gallium oxide (Ga₂O₃) diode technology, highlighting its potential as a cost-effective ultra-wide bandgap material for high-power electronics despite challenges in electron mobility and thermal conductivity.
Overview
As the demand for high-performance and compact power electronics grows—particularly in applications like power trains and smartphone chargers—there is an increasing need for advanced semiconductor materials. While silicon carbide (SiC) and gallium nitride (GaN) have significantly improved power device efficiency, their complex and expensive fabrication processes pose limitations. Gallium oxide (Ga₂O₃) has recently gained attention as a compelling ultra-wide bandgap (UWBG) alternative, offering a 4.8 eV bandgap, a high breakdown electric field of 8 MV/cm, and more accessible fabrication techniques. However, challenges such as low electron mobility and poor thermal conductivity hinder its broader adoption, especially in high-frequency, high-power applications. This presentation will delve into recent progress in Ga₂O₃ diode technology, covering fabrication strategies, performance enhancements, and ongoing efforts to address its limitations. We will also discuss the potential of Ga₂O₃ diodes to reshape the future of power electronics through innovative material and device engineering.
Presenters
Brief Biography
In 2019, Jose Manuel Taboada completed his bachelor's degree in Nanofabrication and Microelectronics at the National Autonomous University of Mexico (UNAM). He then obtained a master's degree in Electrical Engineering from King Abdullah University of Science and Technology (KAUST) in 2022, where he is currently pursuing a Ph.D. His doctoral research focuses on the simulation, design, fabrication, and testing of gallium oxide (Ga₂O₃) based diodes.