Atomic Layer Deposition Reaction Parameters Influence on ZnO's Electrical Properties on Cotton Fabric for Textile Electronics
Textile electronics is a newly emerging field that is gaining the interest of researchers due to its wide range of applications and prospects. Despite the variety of materials and methods used to fabricate textile electronic devices, there is a lack of focus and direction needed for the rapid advancement of this field.
Overview
Abstract
Textile electronics is a newly emerging field that is gaining the interest of researchers due to its wide range of applications and prospects. Despite the variety of materials and methods used to fabricate textile electronic devices, there is a lack of focus and direction needed for the rapid advancement of this field. A suggested solution is concentrating the efforts on versatile methods and materials that can achieve multiple devices. Atomic Layer Deposition (ALD) is a suitable method for textile substrates since it can deposit solid-state materials conformally and at low temperatures. It can deposit semi-conductive Zinc Oxide (ZnO), which is used to fabricate various devices, including transistors, capacitors, and sensors. However, there is limited information about the characteristics of ZnO deposited via ALD on textile substrates.
This research investigates the impact of various ALD reaction parameters on the electrical properties of ZnO deposited on cotton fabric. The ALD reaction utilizes two precursors, Diethylzincite and water, to facilitate the deposition of ZnO on the cotton substrate. The reaction involved a ligand exchange process with gaseous ethane as a byproduct, which is purged after each cycle. The experiment involves conducting the ALD process under different testing conditions, including varying reaction temperatures, dose time for the precursors, purge time, and the duration of holding the precursors in the chamber before purging. By exploring the influence of the mentioned parameters, this research aims to optimize the deposition process for fabric-based electronics and sensors.
Consequently, the optimized recipe shows a low resistivity of 1.25 Ω.cm and an atomic concentration ratio of oxygen per zinc atoms of 22.8. The reaction was conducted at a temperature of 180 oC and had 100 ms DEZ dose time, 25 ms water dose time, and 1 s purge time. The findings contribute to the broader understanding of thin-film deposition processes and their impact on electronic performance, opening avenues for the development of innovative and efficient electronic systems integrated into textile materials.
Brief Biography
Huda Badghaish is a Ph.D. candidate in the Electrical and Computer Engineering department at King Abdullah University for Science and Technology (KAUST). She obtained her Masters degree from KAUST in Electrical and Computer Engineering in 2018. She obtained her undergraduate degree in Biological Engineering with Minors in Sociology and Biomedical Engineering from Pennsylvania State University in 2016. She is a freelance scientific illustrator and has published many figures and covers for journals such as Advanced Materials Technology and ACS Nano.