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Abstract
The junctions formed between the metal contact and semiconductors, gate dielectrics are crucial components of GaN based electronics and optoelectronics. However, owning to lattice mismatch and chemical interaction, the interface quality between these materials are poor which can severely impact the device performance. We studied the fundamental physical property of Al2O3/GaN and also proposed to alleviate the interface problems by creating a vdW gap between two dissimilar materials.
Brief Biography
ChuanJu Wang is a PHD student supervised by Professor Xiaohang Li at the Advanced Semiconductor Laboratory of King Abdullah University of Science and Technology (KAUST). Chuanju received his master's degree from department of physics, TsingHua university in 2017 and joined KASUT in 2020. His research area interface property of wide band gap semiconductors, fabrication and characterization of wide band gap semiconductors such as GaN and Ga2O3.