My research focuses on III-nitride semiconductor nanostructures for solid-state lighting and renewable energy applications.
Mohamed Ebaid Postdoctoral Research Fellow

Education Profile

  • Ph.D. in Physics, Chonnam National University, South Korea (​2011-2015).
  • M.S. in Physics, Beni-Suef University, Beni-Suef, Egypt (2007-2010).
  • Diploma in Experimental Physics, Cairo University, Cairo, Egypt (2005-2006).
  • B. Sc. in Physics, Cairo University (Beni-Suef branch), Egypt (2001-2005).

Professional Profile

  • Postdoctoral Fellow, Photonics Lab, KAUST, KSA (March 2016).
  • Ph.D. candidate, Department of Physics, Faculty of Natural Sciences, Chonnam National University, Gwangju, South Korea (September 2011 - August 2015).
  • Teaching Assistant, Department of Physics, Faculty of Science, Beni-Suef University, Beni-Suef, Egypt (May 2006- November 2010).

Scientific and Professional Membership

  • ​Member of the Egyptian Materials Research Society (Eg-MRS), since 2006.
  • Member of the Korean Physical Society, since 2011.

Mohamed Ebaid worked as a Postdoctoral Fellow at Photonics Laboratory in the Division of Computer, Electrical and Mathematical Sciences & Engineering (CEMSE) at King Abdullah University of Science and Technology (KAUST). He received his Ph.D. in Physics at Chonnam National University, South Korea in 2015 with the research focus on III-nitride semiconductor nanostructures for solid-state lighting and renewable energy applications. His B.Sc. in Experimental Physics was received with honor at Cairo University (Beni-Suef branch), Egypt in 2005. He has served as a reviewer for various international journals including Applied Physics Letters, Scientific Reports and Optics Express. As of March 2016, he has authored/co-authored more than 17 journal papers, invited to write a topical review article and gave more than 10 presentations in international conferences. Currently, Mohamed works at ​Lawrence Berkeley National Lab, California, USA.

Research Interests

Mohamed's research interests included ​Nanomaterials, Solar Energy, GaN, Photonics and Optoelectronics and MOCVD growth of large bandgap group III-nitride nanostructures. His research was focused on the growth, characterizations, and integration of nanostructured GaN-based semiconductor materials for the development of nanoscale optoelectronic devices and the conversion as well as the storage of the solar hydrogen energy.

Selected Publications

  • Mohamed Ebaid, Jin-Ho Kang, Yang-Seok Yoo, Seung-Hyuk Lim, Yong-Hoon Cho and Sang-Wan Ryu: Vertically aligned InGaN nanowires with engineered axial In composition for highly efficient visible light emission. Scientific Reports,  5 (2015) 17003.
  • Mohamed Ebaid, Jin-Ho Kang, Seung-Hyuk Lim, Jun-Seok Ha, June Key Lee, Yong-Hoon Cho and Sang-Wan Ryu: Ehanced Solar Hydrogen Generation of High Density, High Aspect Ratio, Coaxial InGaN/GaN Multi-quantum Well NonowiresNano Energy12 (2015) 2015-223. 
  • Mohamed Ebaid, Jin-Ho Kang, Seung-Hyuk Lim, Yong-Hoon Cho and Sang-Wan Ryu: Towards highly efficient photoanodes: The role of carrier dynamics in the photoelectrochemical performance of InGaN/GaN multi-quantum well coaxial nanowiresRSC Advances5 (2015) 23303-23310.
  • Mohamed Ebaid, Jin-Ho Kang and Sang-Wan Ryu: Controllable Synthesis of Vapor-Liquid-Solid grown GaN Nanowires for Photoelectrochemical  Water Splitting ApplicationsJournal of the Electrochemical Society162 (2015) H264-H270.
  • Mohamed Ebaid, Jin-Ho Kang, Seung-Hyuk Lim, Suk-Min Ko, Yong-Hoon Cho and Sang-Wan Ryu: Ultrashort carrier lifetime of vapor-liquid-solid  grown GaN/InGaN multi-quantum-well coaxial nanorodsActa Materials65 ( 2014) 118-124.
  • Jin-Ho Kang, Mohamed Ebaid, June Key Lee, Tak Jeong and Sang-Wan Ryu: Fabrication of vertical light emitting diode based on thermal deformation fo nanoporous GaN and removalbe mechanical supporter. ACS Applied Materials & Interfaces6 (2014) 8683-8687.
  • Mohamed Ebaid, Jin-Ho Kang, June Key Lee and Sang-Wan Ryu: Controlled growth mode of high-aspect-ratio GaN nanorods  by  Ni/In/Ga catalystJournal of Physics D: Applied Physics, 46 (2013) 38510-385112.