Artem Shushanian

August 2023

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  Paper accepted in ChemComm!

  1 min read · Tue, Aug 1 2023

  News

  We present results from a study addressing the unbiased water-splitting process and its side reactions on n-GaN-based photoelectrodes decorated with NiOx, FeOx, and CoOx nanoparticles. A water-splitting process with n-GaN-based photoelectrodes results in the generation of hydrogen gas and hydrogen peroxide. Quantification of the water-splitting chemical mechanism gave numerical values indicating an increase in the device performance and restriction of the n-GaN electrocorrosion with surface modifications of n-GaN structures.

March 2023

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  Paper accepted in AIP Advances!

  1 min read · Fri, Mar 10 2023

  News

  We have grown high-crystallinity InGaN layers on ScAlMgO4 (SAM) substrates using metalorganic vapor-phase epitaxy. We have prepared atomically flat SAM substrates by cleaving them along the c-plane and have utilized direct InGaN growth without any low-temperature buffer layer. The resulting InGaN layer has a distinct hexagonal hillock morphology and remarkable crystalline quality.

December 2022

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  Congratulations! New Journal of Chemistry adopts Artem’s work as the cover page.

  1 min read · Tue, Dec 13 2022

  News

  The New Journal of Chemistry is for new directions in chemistry. The latest issue (volume 46, Nover 48) has adopted scientific art made by Artem Shushanian (a PhD candidate).

November 2022

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  Paper accepted in New Journal of Chemistry!

  1 min read · Mon, Nov 7 2022

  News

  We studied the electrochemical property of nitride semiconductors. It was expected to be the three-electron nature so far. However, we have found out that it is the six-electron nature. The six-electron nature was observed in different solutions and pH levels, resulting in a universal phenomenon for nitride semiconductors. The result will be useful to control electrochemical etching and other treatments to achieve their precise control.

September 2022

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  Selected as Invited talk at IWN2022 (Berlin, Germany)

  1 min read · Tue, Sep 13 2022

  News

  Prof. Kazuhiro Ohkawa deliver an invited talk at International Workshop on Nitride Semiconductors (IWN). The IWN is a major conference in the fields of LEDs and Lasers. He is the only invited speaker from Saudi Arabia. Mohammed, Artem, and Daisuke give three oral talks and one poster.

January 2022

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  Paper accepted in RSC Advances!

  1 min read · Tue, Jan 25 2022

  News

  The paper reports the investigation of the wet electrochemical etching of n-GaN films in oxalic acid. The results of a number of quantitative physicochemical analysis methods of the products indicated a 6-electron nature of the etching reaction and fully revealed the mechanism of EC oxidation of n-GaN, which includes the formation of intermediates formed by adsorption of the solvent on GaN surface. Clear understanding of this reaction creates a solid foundation for the investigation of transformations of more complicated III-nitride systems for low-damage and high-precision processing of nitride-based devices.