About Davide Priante Davide Priante Ph.D., Electrical and Computer Engineering optoelectronics nanofabrication semiconductors Python (Programming Language) device design Davide Priante obtained his Ph.D. and Master's degree in Electrical Engineering under the supervision of Professor Boon Ooi at King Abdullah University of Science and Technology (KAUST). Davide received his B.Sc. degree in Material Science Engineering from the University of Padova, Italy, in 2013. He joined KAUST in February 2014 as an M.S. to a Ph.D. student in Photonics Laboratory in the Computer, Electrical, and Mathematical Sciences & Engineering (CEMSE) Division. He received his MSc degree in August 2015 with a thesis based on the recombination mechanism of CH3NH3PbBr3 perovskite. Davide Events Presented Events Jul 28 - Aug 3, 2019 Study of ultraviolet AlGaN nanowires light-emitting diodes Davide Priante, Ph.D., Electrical and Computer Engineering Jul 30, 16:00 - 17:00 B3 L5 R5209 photonics optoelectronics nanofabrication Ultraviolet (UV) group III-Nitride-based light emitters have been used in various applications such as water purification, medicine, lighting and chemical detection. Despite attractive properties such as bandgap tunability in the whole UV range (UV-C to UV-A), high chemical stability and relative low cost, the low quantum efficiency hamper the full utilization. This thesis aims to show alternative solutions to such problems by employing nanowires (NWs) structures, and target the eventual application of reliable and high power NWs-based light-emitting devices, enabling large-scale production using the established silicon foundry processes. Here, we present the improvement of injection current and optical power of AlGaN NWs LEDs by involving a metal bilayer thin film with a dual purpose: eliminate the potential barrier for carrier transport, and inhibit the formation of silicide.
Study of ultraviolet AlGaN nanowires light-emitting diodes Davide Priante, Ph.D., Electrical and Computer Engineering Jul 30, 16:00 - 17:00 B3 L5 R5209 photonics optoelectronics nanofabrication Ultraviolet (UV) group III-Nitride-based light emitters have been used in various applications such as water purification, medicine, lighting and chemical detection. Despite attractive properties such as bandgap tunability in the whole UV range (UV-C to UV-A), high chemical stability and relative low cost, the low quantum efficiency hamper the full utilization. This thesis aims to show alternative solutions to such problems by employing nanowires (NWs) structures, and target the eventual application of reliable and high power NWs-based light-emitting devices, enabling large-scale production using the established silicon foundry processes. Here, we present the improvement of injection current and optical power of AlGaN NWs LEDs by involving a metal bilayer thin film with a dual purpose: eliminate the potential barrier for carrier transport, and inhibit the formation of silicide.
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