About Mohammed Najmi Mohammed Najmi Ph.D. Student, Electrical and Computer Engineering Mohammed Najmi is a Ph.D. candidate in Electrical Engineering at King Abdullah University of Science and Technology, focusing on Electro-Physics in the Energy Conversion Devices and Materials Laboratory (ECO Devices Lab). He holds an M.Eng. in Electrical Engineering from Texas A&M University, specializing in Devices and Nanotechnology, and has completed a Business Management course at Mays Business School. Additionally, he earned a B.Sc. in Applied Electrical Engineering from King Fahd University of Petroleum and Minerals (KFUPM). Mohammed brings over nine years of experience in advanced Articles Related News November 2023 Investigation of N-polar InGaN growth on misoriented ScAlMgO4 substrates 1 min read · Thu, Nov 2 2023 News We report the growth of N-polar InGaN layers on misoriented ScAlMgO4 (SAM) substrates with offset of 0.3 to 5.8o toward the m-plane. We obtained an unprecedented crystalline quality of N-polar InGaN using SAM substrates with a 0.5o offset, which exhibited a 000-2 X-ray rocking curve full width at half maximum value of 223 arcsec. May 2023 Congratulations! Mohammed received the Student Poster Award in KAUST Semiconductor Forum. 1 min read · Thu, May 18 2023 News Congratulations! Mohammed received the Student Poster Award (3rd Place) in KAUST Semiconductor Forum. He presented the latest of his research work about InGaN growth on novel ScAlMgO4 substrates toward yellow-red LEDs and LDs. March 2023 Paper accepted in AIP Advances! 1 min read · Fri, Mar 10 2023 News We have grown high-crystallinity InGaN layers on ScAlMgO4 (SAM) substrates using metalorganic vapor-phase epitaxy. We have prepared atomically flat SAM substrates by cleaving them along the c-plane and have utilized direct InGaN growth without any low-temperature buffer layer. The resulting InGaN layer has a distinct hexagonal hillock morphology and remarkable crystalline quality. September 2022 Selected as Invited talk at IWN2022 (Berlin, Germany) 1 min read · Tue, Sep 13 2022 News Prof. Kazuhiro Ohkawa deliver an invited talk at International Workshop on Nitride Semiconductors (IWN). The IWN is a major conference in the fields of LEDs and Lasers. He is the only invited speaker from Saudi Arabia. Mohammed, Artem, and Daisuke give three oral talks and one poster. Selected as “Highlighted talk” at the Autumn meeting of Japanese Society of Applied Physics. 1 min read · Tue, Sep 13 2022 News Our Scheduled presentation is selected as “Highlighted talk” at the Autumn meeting of the Japanese Society of Applied Physics. Mohammed Najmi et al., “Structural analysis of N-polar InGaN layer grown on ScAlMgO4 substrate without buffer layer” 23a-E202-10 from 11:45 am March 23 (JPN time) The ratio of the highlighted talks in this conference is usually less than 1%. June 2022 Paper accepted in Materials Science in Semiconductor Processing! 1 min read · Thu, Jun 16 2022 News The pump and probe technique in Raman spectroscopy is used to demonstrate the phonon transport properties of an In0.05Ga0.95N/GaN heterostructure. This method has the advantage of enabling the study of phonon transport processes inside and at interfaces of films with crystal defects by visualizing the shift of phonon-mode energies due to local heating. Paper accepted in AIP Advances! This paper has been chosen as an Editor's Pick. Congratulations! 1 min read · Wed, Jun 8 2022 News We report highly efficient InGaN-based red light-emitting diodes (LEDs) grown on conventional c-plane-patterned sapphire substrates. The packaged LED's external quantum efficiency, light-output power, and forward voltage with a 621 nm peak emission wavelength at 20 mA (10.1 A/cm2) injection current were 4.3%, 1.7 mW, and 2.96 V, respectively. This design development represents a valuable contribution to the next generation of micro-LED displays. This paper has been chosen as an Editor's Pick. May 2022 Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO4(0001) substrate 1 min read · Mon, May 2 2022 News We demonstrated a high crystalline quality of N-polar InGaN layer grown on ScAlMgO4 substrates by metalorganic vapor-phase epitaxy. The results show that the interface between N-polar InGaN and SAM occurs between the O atoms of the O–Sc SAM surface and the (Ga,In) atoms of InGaN.
Investigation of N-polar InGaN growth on misoriented ScAlMgO4 substrates 1 min read · Thu, Nov 2 2023 News We report the growth of N-polar InGaN layers on misoriented ScAlMgO4 (SAM) substrates with offset of 0.3 to 5.8o toward the m-plane. We obtained an unprecedented crystalline quality of N-polar InGaN using SAM substrates with a 0.5o offset, which exhibited a 000-2 X-ray rocking curve full width at half maximum value of 223 arcsec.
Congratulations! Mohammed received the Student Poster Award in KAUST Semiconductor Forum. 1 min read · Thu, May 18 2023 News Congratulations! Mohammed received the Student Poster Award (3rd Place) in KAUST Semiconductor Forum. He presented the latest of his research work about InGaN growth on novel ScAlMgO4 substrates toward yellow-red LEDs and LDs.
Paper accepted in AIP Advances! 1 min read · Fri, Mar 10 2023 News We have grown high-crystallinity InGaN layers on ScAlMgO4 (SAM) substrates using metalorganic vapor-phase epitaxy. We have prepared atomically flat SAM substrates by cleaving them along the c-plane and have utilized direct InGaN growth without any low-temperature buffer layer. The resulting InGaN layer has a distinct hexagonal hillock morphology and remarkable crystalline quality.
Selected as Invited talk at IWN2022 (Berlin, Germany) 1 min read · Tue, Sep 13 2022 News Prof. Kazuhiro Ohkawa deliver an invited talk at International Workshop on Nitride Semiconductors (IWN). The IWN is a major conference in the fields of LEDs and Lasers. He is the only invited speaker from Saudi Arabia. Mohammed, Artem, and Daisuke give three oral talks and one poster.
Selected as “Highlighted talk” at the Autumn meeting of Japanese Society of Applied Physics. 1 min read · Tue, Sep 13 2022 News Our Scheduled presentation is selected as “Highlighted talk” at the Autumn meeting of the Japanese Society of Applied Physics. Mohammed Najmi et al., “Structural analysis of N-polar InGaN layer grown on ScAlMgO4 substrate without buffer layer” 23a-E202-10 from 11:45 am March 23 (JPN time) The ratio of the highlighted talks in this conference is usually less than 1%.
Paper accepted in Materials Science in Semiconductor Processing! 1 min read · Thu, Jun 16 2022 News The pump and probe technique in Raman spectroscopy is used to demonstrate the phonon transport properties of an In0.05Ga0.95N/GaN heterostructure. This method has the advantage of enabling the study of phonon transport processes inside and at interfaces of films with crystal defects by visualizing the shift of phonon-mode energies due to local heating.
Paper accepted in AIP Advances! This paper has been chosen as an Editor's Pick. Congratulations! 1 min read · Wed, Jun 8 2022 News We report highly efficient InGaN-based red light-emitting diodes (LEDs) grown on conventional c-plane-patterned sapphire substrates. The packaged LED's external quantum efficiency, light-output power, and forward voltage with a 621 nm peak emission wavelength at 20 mA (10.1 A/cm2) injection current were 4.3%, 1.7 mW, and 2.96 V, respectively. This design development represents a valuable contribution to the next generation of micro-LED displays. This paper has been chosen as an Editor's Pick.
Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO4(0001) substrate 1 min read · Mon, May 2 2022 News We demonstrated a high crystalline quality of N-polar InGaN layer grown on ScAlMgO4 substrates by metalorganic vapor-phase epitaxy. The results show that the interface between N-polar InGaN and SAM occurs between the O atoms of the O–Sc SAM surface and the (Ga,In) atoms of InGaN.
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