About Nasir Alfaraj Nasir Alfaraj Ibn Rushd Postdoctoral Fellow, The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto Deep-ultraviolet optoelectronic devices group III–oxide materials hybrid integration of group III–nitrides III–oxides two-dimensional materials Journal Publications Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires Nasir Alfaraj, Somak Mitra, Feng Wu, Idris A. Ajia, Bilal Janjua, Aditya Prabaswara, Renad A. Aljefri, Haiding Sun, Tien Khee Ng, Boon S. Ooi, Iman S. Roqan, Xiaohang Li, Applied Physics Letters (2017). Functional integrity of flexible n-channel metal-oxide-semiconductor field-effect transistors on a reversibly bistableplatform Nasir Alfaraj, Aftab Hussain, Galo A. Torres Sevilla, Mohamed T. Ghoneim, Jhonathan P. Rojas, Abdulrahman B. Aljedaani, Muhammad M. Hussain, Applied Physics Letters (2015). Top Events Presented Events Apr 13 - Apr 19, 2025 Advancing Optoelectronics and Power Electronics: From Ultrawide-Bandgap Semiconductors to Silicon-Integrated Plasmonic Heterojunctions for Next-Generation Applications Nasir Alfaraj, Ibn Rushd Postdoctoral Fellow, The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto Apr 15, 11:30 - 12:30 B3 L5 R5209 Addressing critical challenges in on-chip communication, this presentation details the development of silicon-integrated plasmonic heterojunction devices within the broader context of energy-efficient, high-performance electronic and photonic systems. We emphasize material innovations (e.g., transparent conductive oxides) and architectural advancements aimed at enhancing efficiency and minimizing optical losses. May 14 - May 20, 2023 Viability assays of CMOS-compatible materials, device architectures, and emerging device platforms for nano-photonics Nasir Alfaraj, Ibn Rushd Postdoctoral Fellow, The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto May 18, 15:00 - 16:00 B5 L5 R5209 nanophotonics My research at the University of Toronto involves designing and fabricating CMOS-compatible nano-plasmonic waveguide structures and devices for on-chip communication. By taking advantage of the absence of diffraction limits, strong modal confinement is made possible using plasmonic device architectures, laying the foundations for improved optical processes and photonic circuit integration. All-oxide structures have emerged as promising plasmonic materials that can serve as relatively low carrier density Drude metals and dielectric spacers by their electro-optic tunability and versatility. I demonstrated the facile integration of all-oxide heterointerfaces into metal–insulator–semiconductor (MIS) electro-optic structures. From there, I fabricated MIS devices that incorporated semiconductive oxide layers with oxide dielectric spacers on silicon-on-insulator (SOI) platforms, constituting graded-index coupled hybrid plasmonic waveguide (CHPW) optical modulators. Nov 10 - Nov 16, 2019 Deep-Ultraviolet Optoelectronic Devices Enabled by the Hybrid Integration of Next-Generation Semiconductors and Emerging Device Platforms Nasir Alfaraj, Ibn Rushd Postdoctoral Fellow, The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto Nov 11, 18:00 - 20:00 B3 L5 R5209 photonics ultraviolet wavelengths optoelectronics In this dissertation, the design and fabrication of deep-ultraviolet photodetectors, based on gallium oxide and its alloys, through the heterogeneous integration with metallic and other inorganic materials is investigated. The crystallographic properties of grown oxide films formed directly and indirectly on silicon, magnesium oxide, and sapphire are examined, and the challenges that hinder the realization of efficient and reliable deep-ultraviolet photodetectors are elaborated on. I provide an overview of aluminum nitride, gallium oxide, sapphire, and silicon substrates as platforms for deep-ultraviolet optoelectronic devices, in which I elaborate on the challenges associated with using sapphire as a platform for efficient deep-ultraviolet devices and detail advancements in device growth and fabrication on silicon and magnesium oxide substrates.
Advancing Optoelectronics and Power Electronics: From Ultrawide-Bandgap Semiconductors to Silicon-Integrated Plasmonic Heterojunctions for Next-Generation Applications Nasir Alfaraj, Ibn Rushd Postdoctoral Fellow, The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto Apr 15, 11:30 - 12:30 B3 L5 R5209 Addressing critical challenges in on-chip communication, this presentation details the development of silicon-integrated plasmonic heterojunction devices within the broader context of energy-efficient, high-performance electronic and photonic systems. We emphasize material innovations (e.g., transparent conductive oxides) and architectural advancements aimed at enhancing efficiency and minimizing optical losses.
Nasir Alfaraj, Ibn Rushd Postdoctoral Fellow, The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto
Viability assays of CMOS-compatible materials, device architectures, and emerging device platforms for nano-photonics Nasir Alfaraj, Ibn Rushd Postdoctoral Fellow, The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto May 18, 15:00 - 16:00 B5 L5 R5209 nanophotonics My research at the University of Toronto involves designing and fabricating CMOS-compatible nano-plasmonic waveguide structures and devices for on-chip communication. By taking advantage of the absence of diffraction limits, strong modal confinement is made possible using plasmonic device architectures, laying the foundations for improved optical processes and photonic circuit integration. All-oxide structures have emerged as promising plasmonic materials that can serve as relatively low carrier density Drude metals and dielectric spacers by their electro-optic tunability and versatility. I demonstrated the facile integration of all-oxide heterointerfaces into metal–insulator–semiconductor (MIS) electro-optic structures. From there, I fabricated MIS devices that incorporated semiconductive oxide layers with oxide dielectric spacers on silicon-on-insulator (SOI) platforms, constituting graded-index coupled hybrid plasmonic waveguide (CHPW) optical modulators.
Nasir Alfaraj, Ibn Rushd Postdoctoral Fellow, The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto
Deep-Ultraviolet Optoelectronic Devices Enabled by the Hybrid Integration of Next-Generation Semiconductors and Emerging Device Platforms Nasir Alfaraj, Ibn Rushd Postdoctoral Fellow, The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto Nov 11, 18:00 - 20:00 B3 L5 R5209 photonics ultraviolet wavelengths optoelectronics In this dissertation, the design and fabrication of deep-ultraviolet photodetectors, based on gallium oxide and its alloys, through the heterogeneous integration with metallic and other inorganic materials is investigated. The crystallographic properties of grown oxide films formed directly and indirectly on silicon, magnesium oxide, and sapphire are examined, and the challenges that hinder the realization of efficient and reliable deep-ultraviolet photodetectors are elaborated on. I provide an overview of aluminum nitride, gallium oxide, sapphire, and silicon substrates as platforms for deep-ultraviolet optoelectronic devices, in which I elaborate on the challenges associated with using sapphire as a platform for efficient deep-ultraviolet devices and detail advancements in device growth and fabrication on silicon and magnesium oxide substrates.
Nasir Alfaraj, Ibn Rushd Postdoctoral Fellow, The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto
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