GaN-based electronics

PhD Dissertation Defense - Interface engineering for GaN HEMTs

Chuanju Wang, Ph.D. Student, Electrical and Computer Engineering

Feb 26, 17:00 - 19:00

B3 L5 R5209

GaN-based electronics Metal-GaN interfaces Dielectric-GaN interfaces

The research focuses on improving metal-GaN and dielectric-GaN interfaces for high-performance GaN-based electronics. For metal-GaN, the damage caused by e-beam evaporation was mitigated using Ti3C2Tx MXene films, achieving a record ION/IOFF current of 1013 and low subthreshold swing.

Zixian Jiang

M.S. Student, Computer, Electrical and Mathematical Sciences and Engineering

III - V compound semiconductors GaN-based electronics GaN HEMT

Zixian Jiang is a M.S/Ph.D. student at the Advanced Semiconductors Laboratory (ASL) under the supervision of Prof. Xiaohang Li at King Abdullah University of Science and Technology (KAUST). He obtained a bachelor's degree in electrical engineering from the University of Electronic Science and Technology of China, China.