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III-nitride nanowires
Study of III-nitride Nanowire Growth and Devices on Unconventional Substrates
Aditya Prabaswara, Ph.D., Electrical and Computer Engineering
Sep 12, 09:30
-
11:00
B3 L5 R5209
semiconductors
III-nitride nanowires
optoelectronics
This thesis aims to investigate the microscopic characteristics of the nanowires and expand on the possibility of using transparent amorphous substrate for III-nitride nanowire devices. In this work, we performed material growth, characterization, and device fabrication of III-nitride nanowires grown using molecular beam epitaxy on unconventional substrates including silicon substrates and fused silica substrates. We also investigated the effect of various nucleation layers on the morphology and quality of the nanowires.
