ZnO channels

All‐Oxide Thin Film Transistors and Rectifiers Enabling On‐Chip Capacitive Energy Storage

1 min read · Sun, Dec 1 2019

ZnO channels atomic layer deposition Thin Film Transistors Rectifiers On‐Chip Capacitive Energy Storage

Wang Zhenwei, et al., "All‐Oxide Thin Film Transistors and Rectifiers Enabling On‐Chip Capacitive Energy Storage." Advanced Electronic Materials 5 (12), 2019, 1900531. All-oxide, fully-transparent thin film transistors and rectifiers, processed entirely by atomic layer deposition, have been developed for on-chip capacitive energy storage. Fully depleted thin film transistor (TFT) operation is achieved by optimizing the carrier concentration in the ZnO channels. The TFTs show an average saturation mobility of 10.5 cm2 V−1 s−1, a stable positive turn-on voltage of 0.88 V, a low subthreshold