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Abstract
After the invention of the high-efficiency blue light-emitting diode (LED) at the end of the twentieth century, a new generation of light-emitting devices based on III-nitrides emerged, showcasing the capabilities of this semiconductor family. Despite the current limitations in the fabrication of III-nitrides, their optical and electronic properties still place them as some of the most promising semiconductors to continue the development of optoelectronic devices. This dissertation presents a variety of methodological approaches to characterize, from a microstructural point of view, different properties of novel III-nitride-based heterostructures and devices. The results of the various characterizations contributed to developing novel LEDs and photocatalysts. The analyses and results presented in this dissertation strongly relied on the analytical capabilities offered by transmission electron microscopy, which proved to be a convenient and versatile tool for the characterization of many aspects related to the fabrication of III-nitride-based optoelectronic devices.
Brief Biography
Martin Velazquez-Rizo earned his M.Sc. degree in Electrical Engineering (2017) and B.Sc. in physics (2014) from the King Abdullah University of Science and Technology (KAUST) and Universidad Nacional Autonoma de Mexico, respectively. He is deeply interested in the physics behind current optoelectronic devices and contributing to emerging technologies that can improve our lives in various ways in the future.
