The introduction of electric-powered light had a huge impact on society and people's life. We are working to go one step further and change the way we use energy for communication and sensing applications.
- Doctor of Philosophy, Lehigh University, USA. Major: Electrical Engineering (2008 – 2013).
- Bachelor of Science, Huazhong University of Science and Technology, China. Major: Electronic Science and Technology (2004 – 2008).
- Research Scientist, Photonics Laboratory, KAUST, KSA (Mar. 2016).
- Process Technology Development Engineer, Intel, Portland, Oregon, USA (Nov. 2013 - Feb. 2016).
- Research Assistant, Lehigh University, Bethlehem, Pennsylvania, USA (July 2008 - Sept. 2013).
- Spring 2013, Substitute Lecturer, Lehigh University, Bethlehem, Pennsylvania, USA (Spring 2012, Fall 2012).
Scientific and Professional Membership
- Member of IEEE.
- Member of The Optical Society (OSA).
Honors and Awards
- DIC Divisional Award, Intel, Q1 2015.
- DIC Divisional Award, Intel, Q3 2014.
- DIC Divisional Award, Intel, Q2 2014.
- Rossin Doctoral Fellowship, Lehigh University, 2013.
- SPIE Scholarship in Optics and Photonics, SPIE, 2012.
- Sherman-Fairchild Fellowship for Solid State Studies, Lehigh University, 2009, 2010, 2012, 2013.
- Dean's Scholarship, Lehigh University, 2008, 2009.
Guangyu Liu was a Research Scientist at Photonics Laboratory in the Division of Computer, Electrical and Mathematical Sciences & Engineering (CEMSE) at King Abdullah University of Science & Technology (KAUST). She received her Ph.D. in Electrical Engineering at Lehigh University, Pennsylvania, United States of America (USA) in 2013 with the research focus on III-nitride semiconductor nanostructures and optoelectronics for solid-state lighting. Her B.Sc. in Electronic Science and Technology was received with honor at Huazhong University of Science and Technology (HUST), Hubei, China in 2008. Prior to KAUST, she worked as Process Technology Development Engineer at Intel Corp, USA to develop the manufacturing process of state-of-the-art VLSI logic and memory chips for large volume production from 2013-2016.
Her current research area is III-nitride semiconductor-based integrated devices and systems for communication and sensing applications. She has served as a reviewer for various international journals including Optics Express, IEEE Photonics Journal and Nanoscale Research Letters. As of March, 2016, she has authored/co-authored more than 20 journal papers with h-index of 19 and held 5 US patents.
Guangyu's research interests included Large bandgap group - III nitride GaN-based semiconductor physics and devices, Fabrication and characterization of optoelectronics and microelectronic devices and systems.
- G Y. Liu, H. P. Zhao, J. Zhang, J. H. Park, L. J. Mawst and N. Tansu, "Selective Area Epitaxy of Ultra-High Density InGaN Quantum Dots by Diblock Copolymer, " Nanoscale Res. Lett., vol. 6, Art. 342, April 2011.
- G Y. Liu, J. Zhang, X. H. Li, G. S. Huang, T. Paskova, K. R. Evans, H. P. Zhao and N. Tansu, "Metalorganic Vapor Phase Epitaxy and Characterizations of Nearly-Lattice-Mathced A1InN Alloys on GaN / Sapphire Templates and Free-Standing GaN Substrates," J. Crys. Growth, vol. 340 (1), pp. 66-73, February 2012.
- G Y. Liu, J. Zhang, C. K. Tan and N. Tansu, "Efficiency-Droop Suppression by Using Large-Bandgap A1GaInN Thin Barrier Layers in InGaN Quantum Wells Light-Emiting Diodes", IEEE Photonics Journal, vol. 5, no. 2, Art. 2201011, April 2013.
- H. P. Zhao, G Y. Liu, X. H. Li, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf and N. Tansu, "Growths of Staggered InGaN Quantum Wells Light-Emitting Diodes Emitting at 520-525 nm Employing Graded Growth-Temperature Profile," Appl. Phys. Lett., vol. 95(6), Art. 061104, August 2009.
- (Invited Journal Paper) H. P. Zhao, G Y.Liu,X. H. Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf and N. Tansu, " Design and Characteristics of Staggered InGaN Quantum Well Light Emitting Diodes in the Green Spectral Regimes," IET Optoelectronics, vol. 3 (6), pp. 283-295, December 2009.