About Chuanju Wang Chuanju Wang Ph.D. Student, Electrical and Computer Engineering Chuanju Wang is a PhD student supervised by Professor Xiaohang Li at the Advanced Semiconductor Laboratory at King Abdullah University of Science and Technology (KAUST). Chuanju received his Master degree from department of physics, TsingHua University in 2017. His research area is highly ordered metal and semiconductor nanorod arrays during master degree. Research Interest: Interface property of wide band gap semiconductors. Fabrication and characterization of wide band gap semiconductors. Main fabrication tools: MOCVD, ALD, PECVD,PLD,PECVD,EBEAM. Main characterization: Probe station, TEM Events Presented Events Feb 25 - Mar 2, 2024 PhD Dissertation Defense - Interface engineering for GaN HEMTs Chuanju Wang, Ph.D. Student, Electrical and Computer Engineering Feb 26, 17:00 - 19:00 B3 L5 R5209 GaN-based electronics Metal-GaN interfaces Dielectric-GaN interfaces The research focuses on improving metal-GaN and dielectric-GaN interfaces for high-performance GaN-based electronics. For metal-GaN, the damage caused by e-beam evaporation was mitigated using Ti3C2Tx MXene films, achieving a record ION/IOFF current of 1013 and low subthreshold swing. Nov 19 - Nov 25, 2023 Interface engineering for GaN HEMTs Chuanju Wang, Ph.D. Student, Electrical and Computer Engineering Nov 19, 12:00 - 13:00 B9 L2 H2 semiconductor The junctions formed between the metal contact and semiconductors, gate dielectrics are crucial components of GaN based electronics and optoelectronics.
PhD Dissertation Defense - Interface engineering for GaN HEMTs Chuanju Wang, Ph.D. Student, Electrical and Computer Engineering Feb 26, 17:00 - 19:00 B3 L5 R5209 GaN-based electronics Metal-GaN interfaces Dielectric-GaN interfaces The research focuses on improving metal-GaN and dielectric-GaN interfaces for high-performance GaN-based electronics. For metal-GaN, the damage caused by e-beam evaporation was mitigated using Ti3C2Tx MXene films, achieving a record ION/IOFF current of 1013 and low subthreshold swing.
Interface engineering for GaN HEMTs Chuanju Wang, Ph.D. Student, Electrical and Computer Engineering Nov 19, 12:00 - 13:00 B9 L2 H2 semiconductor The junctions formed between the metal contact and semiconductors, gate dielectrics are crucial components of GaN based electronics and optoelectronics.
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