Dhanu Chettri
Biography
Dhanu Chettri is a Ph.D. candidate at the Advanced Semiconductor Laboratory (ASL) at King Abdullah University of Science and Technology (KAUST), under the mentorship of Prof. Xiaohang Li. His research focuses on ultra-wide bandgap semiconductors, particularly Gallium Oxide (Ga2O3) and Aluminum Nitride (AlN). Before joining KAUST, he served as a Senior Project Fellow at the Council of Scientific and Industrial Research–Central Electronics Engineering Research Institute (CSIR–CEERI).
Chettri’s research primarily involves material growth, device design, fabrication, and circuit implementation of advanced semiconductor devices such as MOSFETs and bidirectional switches. He has made significant contributions to the field, as evidenced by his publications. Notably, he achieved the first demonstration of a normally OFF β-Ga2O3 bidirectional switch, featured in Applied Physics Letters, AIP along with the first demonstration of an AlN MOSFET, published in the Journal of Physics D, IOP.
His research is particularly relevant for developing technologies suited to high-temperature and extreme environment applications, demonstrating the critical role and potential of ultra-wide bandgap semiconductors in modern electronics.
Research Interests
Dhanu's research interests include ultrawide bandgap semiconductor materials, specifically Ga2O3 and AlN. His work focuses on the fabrication and characterization of devices such as MOSFETs and FinFETs.
